The status of advanced GaAs-based solar cell structures and technologies is discussed. Efficiencies exceeding 21% AM0, yield distribution and radiation testing data are reported for GaAs solar cells on GaAs substrates. The first functional devices of thinned solar cells (2 cm*2cm<20%) are ...
GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off The epitaxial lift-off (ELO) technique was used in forming a thin-film GaInP/GaAs two-junction monolithic tandem solar cell structure. First, the GaInP sin... Y Yazawa,K Tamura,S Wata...
GaAs-GaAlAs solar cells The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum ars... SG Kamath,CL Anderson - US 被引量: 22发表: 1979年 High performance solar cells based on graphene-GaAs heterostr...
Kasap, S. Özçelik, Study on growth and characterizations of GaxIn1−xP/GaAs solar cell structure. J. Mater. Sci. Mater. Electron. 24, 3269–3274 (2013). https://doi.org/10.1007/s10854-013-1242-y Article Google Scholar S.M. Sze, K.K. Ng, Physics of semiconductor devices, ...
(the radius of the circles). The solar cell structure of each work is marked by the symbols of the red triangle (for single junction) and green pentagon (for tandem junction), individually. The photoelectrodes, redox couples, and the corresponding energy capacity of SFB are displayed near ...
GaAs-GaAlAs solar cells 专利名称：GaAs-GaAlAs solar cells 发明人：G. Sanjiv Kamath,Carl L. Anderson 申请号：US05/792839 申请日：19770502 公开号：US04163987A 公开日：19790807 专利内容由知识产权出版社提供 摘要：The specification describes an improved III-V compound solar cell structure and ...
This structure was found to have a diode like I-V characteristics under dark and behaved like a solar cell exhibiting V oc = 0.81V and I sc = 5mA/cm 2 at room temperature under illumination with tungsten halogen light of 100 mW/cm 2 intensity. Further studies are required to find out...
GaAs solar cells using an n(+)/p/p(+) structure have been fabricated which show conversion efficiencies of 21% (AM1) on single-crystal GaAs and Ge substrates. The GaAs solar cells were prepared on Ge-coated Si substrates and thin single-crystal GaAs cells were prepared on reusable GaAs ...
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type gallium arsenide substrate to form a P-type region and a PN junction in the substrate. Controlled ...
Solar cell structureThe proposed surface nano-sphere light trapping structure based on thin film GaAs solar cells has been shown schematically in Fig. 1. The structure consists of a nano-sphere surface coating layer, an Al0.8GaAs window layer, and active layer of GaAs is placed below this ...