semiconductor compoundsGaAs(110)fully dynamical one-step theoryrelativistic generalizationultraviolet photoemissionbremsstrahlung isochromat spectraA fully dynamical one-step theory of photoemission for several atoms per unit cell is applied to GaAs. The theory is a relativistic generalization of the original ...
In addition, GaAs(111)A-(2 × 2) surface has the Ga-vacancy buckling reconstruction, in which one Ga atom per (2 × 2) unit cell is missing at the outermost Ga layer22. It has been shown by scanning tunneling microscopy that initially deposited Ga atoms are consumed to the ...
8. The atomic coordinates were calculated using both a 4 2 unit cell and a c(8 2) one, and the results were very similar. We also probed the adsorption of additional Ga adatoms on top of the (4 2) unit cell, as suggested in Ref. 9. This con?guration turns out to be ...
It is this impurity-like behaviour of Bi atoms in GaAs and related III-V semiconductor matrices that gives rise to the unusual electronic properties of dilute bismide alloys, and significantly complicates the theoretical description of the material band structure2,28. We have previously developed ...
Under these conditions, the sticking coefficient of group-III atoms is very close to unity. However, the group-V atoms of different species have to compete for a limited number of anion sites. This leads to a strong dependence of the alloy composition on the growth conditions like group-V ...
coordinates were calculated using both a 4 2 unit cell and a c(8 2) one, and the results were very similar. We also probed the adsorption of additional Ga adatoms on top of the (4 2) unit cell, as suggested in Ref. 9. This configuration turns out to be energetically unstable, ...
Based on STM and LEED data we propose a structure model with two Ga atoms per surface unit cell. Finally we predict a long-range interaction between rows and a relaxation of the Ga Ga separation within the rows.doi:10.1016/0039-6028(96)00825-4D.E. Bürgler...
Electron-phonon (e–ph) interactions are usually treated in the lowest order of perturbation theory. Here we derive next-to-leading order e–ph interactions, and compute from first principles the associated electron-two-phonon (2ph) scattering rates. The
Thiolated aptamer are attached to GaAs by a spontaneous reaction between sulfur of the thiol group to the Ga and As atoms. Such reaction was widely reported in the case of alkanethiols [58,59]. 2.8. Bacillus spore enumeration on GaAs biochip Biochips exposed to the spore suspension were ...
The wide coverage range for which this reconstruction can be maintained is explained by a varying number of missing As atoms from the basic six atom structural unit. A new structural model is proposed for the c(4 × 4) structure based on its formation from the starting (2 × 4) surface ...