gallium arsenide (GaAs) solar cellmodelspace applicationThough gallium arsenide (GaAs) solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. The lifetime of solar cells is restricted by the de...
In this study, we investigated an In0.49Ga0.51P/GaAs betavoltaic heterojunction cell powered by Promethium-147 (Pm147) irradiation, which emits negative beta-particles with an average kinetic energy of 61.93 keV, using a lab-made software. Simulations of cell's current density–voltage J(V) ...
Currently, the active materials used for the fabrication of solar cells are mainly inorganic. Materials such as silicon (Si), gallium-arsenide (GaAs), cadmium-telluride (CdTe), and cadmium-indium-selenide (CIS). Nevertheless, the large production cost for the silicon solar cells is one of the...
Moreover, the single PIN hydrogenated microcrystalline silicon (with crystalline volume fraction F C ~ 79%) is studied in order to increase the efficiency of the Micromorph tandem solar Cells. The impact of the intrinsic top cell (a-Si:H) and bottom cell (c-Si:H) at the characteristics ...
Li H. Study on growth of Two-Terminal monolithic GaInP2/GaAs/Ge tandem solar cell by MOCVD. Dissertation for Master Degree. Xi’ an: Xi’ an Institute of Optics and Precision Mechanics of the Chinese Academy of Science, 2001 Wang E G. Atomic-scale study of kinetics in film growth (I...
Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge We report a 50% increase in the power conversion efficiency of InAs/GaAs quantum dot solar cells due to n-doping of the interdot space. The n-doped device ... KA Sablon,JW Little,V Mitin,... - 《...
Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resi... JF Wheeldon,CE Valdivia,AW Walker...
Top-cellAlInP (n) GaInP (p) GaInP (n) Al0.25Ga0.25- In0.5P (p)Window Emitter Base BSF0.02 1.00 0.03 0.022 × 1018 5× 1017 1× 1016 2× 1018 Tunnel-junctionGaAs (p+) GaAs (n+)n++layer p++layer0.025 0.0255 × 1019 5× 1019 ...
There are presented the results of the simulation for Einstein absorption coefficient and quantum efficiency of the transition between the resonant levels of GaAs, as well as quantum efficiency of the transitions between the confinement levels. 展开 ...
Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunctionsolar cell development. This paper describes si... B Dennai,HB Slimane,A Helmaoui - Journal of Nano- and Elect...