Quantum-wellLaserIn this paper, we present an InGaAs/GaAs strain QW laser with tilted waveguide emitting at 1054 nm that has been fabricated by Metal-Organic Chemical-Vapor Deposition (MOCVD) on a GaAs substrate. The active region consists of 6 nm QW separated by a 60-nm barrier within...
Role of electric and magnetic field on the localization of excitons in modulation-doped InGaAs/GaAs quantum well (QW) is investigated by temperature and magnetic field dependent photoluminescence (PL) spectroscopy. In this sample, an asymmetric doping profile on the one side of QW results in a st...
The electroluminescence ofGaInNAs∕GaAsquantum well light-emitting diodes is analyzed as a function of temperature and injection current. The relative influence of nonradiative carrier recombination, recombination from localized states, and conduction-band to valence-band recombination is discussed. The loca...
The improvement in DC and RF characteristics of Quantum Well base in GaAs HBT (Hetero Junction Bipolar Transistor) is presented. Based on an experimentally validated model of the Silvaco TCAD tool, the properties of the GaAs HBT are simulated. Our results are indicative that Quantum Well base in...
Di Cecca, “Ultrafast, room-temperature, resonance-enhanced third-order optical susceptibility tensor of an AlGaAs/GaAs quantum well”, Opt. Lett., 16, pp. 901–903, 1991; H.Q. Le, S. Di Cecca, “Ultrafast, multi-THz-detuning, third-order frequency conversion in semiconductor quantum-well...
We have investigated the scanning-tunneling-microscopy-induced light emission originating from a single GaAs quantum well. The 5-nm-thick quantum well was confined between a 30-nm-thick AlAs barrier (grown onto a GaAs substrate) and the vacuum tunneling gap. Low currents ensured a nonintrusive in...
摘要: Resonant photoexcitation of a predominately homogeneously broadened exciton line in a GaAs quantum well results in a nonexponential time-resolved photoluminescence decay transient due to the decrease in the exciton-exciton scattering contribution to the homogeneous linewidth, Γ...
As an example of a bipolar semiconductor laser, we treat the GaAs quantum well laser (wavelength around 800 nm). In later chapters, we will study quantum well lasers consisting of other materials and bipolar lasers of other types.doi:10.1007/978-3-319-50651-7_22Karl F. Renk...
Multi-section waveguide structure is generally adopted in a semiconductor mode-locked laser9,10,11,12, where the gain section is forward biased and saturable absorber (SA) section is reversely biased. The gain properties of single-section different material quantum well (QW)/quantum dot (QD) las...
The binding energy of Wannier excitons bound to ionized-donor impurities, D+, in GaAs/AlxGa1−xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fi...