This paper attempts to summarize some of the salient properties of excitons in GaAs quantum wells and in doing so it will emphasize work at AT&T Bell Labs with which the authors have been associated. Although th
semiconductor quantum wells/ high-temperature excitonsGaAs quantum wellsAlAs/GaAs superlatticesphotoluminescenceradiative recombinationPhotoluminescence (PL) spectra of GaAs quantum wells embedded in short-period AlAs/GaAs superlattices have been measured at 2 K and at room temperature. Two approaches have ...
semiconductor quantum wells/ asymmetric double quantum wellsspatially indirect excitonspumping levelcollective propertiesphotoluminescenceLow-temperature ( T =1.8, 4.2 K) luminescence of GaAs/Al 0.3 Ga 0.7 As double-coupled asymmetric quantum wells (DQW) is observed under variation of an electric field V...
Positive trions in a quasi-two-dimensional hole gas confined in symmetric and asymmetric GaAs quantum wells are studied by a combination of polarization-resolved photoluminescence and transport measurements in high magnetic fields B (up to 23 T) and low temperatures (down to 30 mK). The experiment...
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results,...
A theory of far-infrared (FIR) magneto-optical intraband s → p ± transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained In x Ga 1 x As/GaAs quantum wells with nondegenerate valence band in the regime of ...
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results...
Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation Introduction InGaAs quantum dots (QDs) grown in the Stranski–Krastanov (SK) mode are excellent photon emitters. Individual QDs provide a source of highly indistinguishable single-photons1,2,3,4,5,6and a platform for sp...
A theory of excitons in GaAs Ga1−xAlxAs quantum wells is presented, which includes valence band mixing via the calculated subband structure. Binding energies and oscillator strengths are calculated for various excitons in their ground and excited states. This theory implies that parity forbidden ...
In spite of the fact that electrons and holes are present in spatially separated regions, the binding energies are of magnitude similar to those found in compositional GaAs quantum wells.DOI: 10.1103/PhysRevB.41.6036 被引量: 11 年份: 1990 ...