semiconductor quantum wellssilicon/ GaAs/AlGaAs quantum well infrared photodetectorsWe fabricated GaAs (Si doped, 40 )/Al 0.25 Ga 0.75 As (undoped, 500 ) multiquantum well infrared photodetectors to realize a high efficiency. The detector is based on the intersubband transition from a bound state ...
High contrast ratio, high uniformity multiple quantum well spatial light modulators高对比度、高均匀性材料GaAs/AlGaAs多量子阱空间光调制器空间光调制器高对比度多量子阱高均匀度厚度均匀性波长变化偏置电压晶圆片Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are ...
GaAs / AlGaAs Quantum Well Infrared Photodetector Snap-Shot CameraGunapala, Sarath DBandara, Sumith VSingh, ALiu, John KRafol, Sir BLuong, E MMumolo, Jason MTran, Nhan QTing, David ZVincent, J D
当当中国进口图书旗舰店在线销售正版《预订 Numerical Exploration of Isolated GaAs-AlGaAs Quantum Well 孤立砷化镓-铝砷化镓量子阱的数值探索: 9783031538155》。最新《预订 Numerical Exploration of Isolated GaAs-AlGaAs Quantum Well 孤立砷化镓-铝砷化镓量子阱的数
近期利用 GaAs/AlGaAs 材料研制了工作于 50 K 的 640×512 量子阱长波 10.55μm 红外焦平面探测器，对集成制冷机的探测器性能进行了测试分析，F/2 冷屏下，等效噪声温差可以达到 22.5 mK。直接测量得到的非均匀性主要来源是受冷屏形状的决定性控制。采用 MEEP 软件对量子阱探测器内光场进行了计算，分析了 ...
Fig. 5 Maximum output poWer for 100,m GaAs/AlGaAs laser diodes (a) With a broad Waveguide and (b)With a narroW Waveguide The maximum output poWer in the diodes With a broad Waveguide Was compared With that With a narroW Waveguide. Figure 5 shoWs the output characteristics of the tWo kind...
QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAsAlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS36阅读 文档大小:246.09K 7页 xcttfvbg上传于2015-05-07 格式:PDF quantum mechanical black holes towards a unification of quantum mechanics and general relativity 热度: Principles of Quantum ...
GaAs/AlGaAs量子阱红外探测器的光荧光表征 MBE生长高光功率转换效率InGaAs/GaAs/AlGaAs应变量子阱激光器 PHOTOCURRENT AND ELECTRON INTERFERENCE OF GaAs/AlGaAs MULTIQUANTUM WELL STRUCTUREGaAs/AlGaAs多量子阱结构的光电流与电子干涉 INFLUENCE ON GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR OF PROTON IMPLAN TATION ...
lGaAs quantum wells Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wellsOptical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wellsTheoretical or Mathematical, Experimental/ aluminium compoundsdegenerate semiconductors...
We have studied the atomic steps and terraces at the interfaces of GaAs/AlGaAs single quantum well (SQW) structures grown by gas-source MBE on slightly misoriented GaAs substrates from (100) toward (111)A or (111)B plane with various misorientation angles α=0°, 0.5°, 1°, 2°, 4°...