Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here ...
出版年:2008-09-05 页数:1096 定价:USD 139.00 装帧:Hardcover ISBN:9780387473130 豆瓣评分 评价人数不足 评价: 写笔记 写书评 加入购书单 分享到 推荐 内容简介· ··· Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices...
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The energy band diagram for a metal and an N-type semiconductor is 170 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES as the energy required to move an electron from the bottom of the conduction band in the semiconductor (E C ) to a state of rest in free space outside the surface of th...
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功率半导体器件基础= Fundamentals of Power Semiconductor Devices : 英文 《国外信息科学与技术优秀图书系列:功率半导体器件基础(英文版)》作者B.Jayant Baliga是功率半导体器件领域的著名专家,IGBT器件发明人之一.本书结合作者多年的实践经... 巴利伽,B. J. ) - 功率半导体器件基础= Fundamentals of Power Semicondu...
Baliga, Fundamentals of Power Semiconductor Devices, doi: 10.1007/978-0-387-47314-7_3, ? Springer Science + Business Media, LLC 2008 92 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES field exceeds 1 × 105 V cm?1 as discussed in Chap. 2. With further increase in the electric field, the ...
In the case of silicon carbide devices, the influence of tunneling current must also be taken into account when performing the analysis of the reverse leakage current. Many applications described in Chap. 1 require fast switching rectifiers B.J. Baliga, Fundamentals of Power Semiconductor Devices, ...