Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here ...
页数:1096 定价:USD 139.00 装帧:Hardcover ISBN:9780387473130 豆瓣评分 评价人数不足 评价: 推荐 内容简介· ··· Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry...
功率半导体器件基础= Fundamentals of Power Semiconductor Devices : 英文 《国外信息科学与技术优秀图书系列:功率半导体器件基础(英文版)》作者B.Jayant Baliga是功率半导体器件领域的著名专家,IGBT器件发明人之一.本书结合作者多年的实践经... 巴利伽,B. J. ) - 功率半导体器件基础= Fundamentals of Power Semicondu...
properties for the 4H poly-type of silicon carbide have been included here because its properties are superior to those of the 2–4 are summarized and B.J. Baliga, Fundamentals of Power Semiconductor Devices, doi: 10.1007/978-0-387-47314-7_2, © Springer Science + Business Media, LLC ...
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Baliga, Fundamentals of Power Semiconductor Devices, doi: 10.1007/978-0-387-47314-7_3, ? Springer Science + Business Media, LLC 2008 92 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES field exceeds 1 × 105 V cm?1 as discussed in Chap. 2. With further increase in the electric field, the ...
(10.1) 1030 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES The power loss incurred in the transistor during the on-state duration from time t3 to t4 is given by PL,T (on) = t4 ? t3 I MVON,T . T (10.2) The power loss incurred in the transistor during the off-state duration beyond time...
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to define an electron affinity for the semiconductor (χS) 170 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES as the energy required to move an electron from the bottom of the conduction band in the semiconductor (EC) to a state of rest in free space outside the surface of the semiconductor. Th...