Power Electronics: Devices, Circuits, and Industrial Applications, 1/e The characteristics of modern power semiconductor devices like the power transistor, MOSFET and the IGBT are also discussed. Other relevant topics like cycloconverters, brushless DC motors, microprocessor fundamentals, microprocessor cont...
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定价:USD 139.00 装帧:Hardcover ISBN:9780387473130 豆瓣评分 评价人数不足 评价: 推荐 内容简介· ··· Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical...
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here ...
FundamentalsofSolid-statePowerDevice Vocabulary semiconductor['semikən'dʌktə]半导体 squirrel['skwirəl]n.鼠笼式diode['daiəud]n.二极管thyristor[θai'ristə]n.晶闸管 n.heatsink n.散热器 self-latching自锁 commutation [7kCmju(:)5teiFEn]n.换向 gttpscwacces符rriornamcahaialya号thi...
fundamentals of power semiconductor devices --baliga 星级: 67 页 Fundamentals of Power Semiconductor Devices 星级: 1092 页 Fundamentals of power semiconductor devices 星级: 10 页 Power Semiconductor Devices 星级: 37 页 Power Semiconductor Devices 星级: 14 页 power semiconductor devices 星级: 6...
to define an electron affinity for the semiconductor (χS) 170 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES as the energy required to move an electron from the bottom of the conduction band in the semiconductor (EC) to a state of rest in free space outside the surface of the semiconductor. Th...
The power loss incurred during the first segment is negligible due to the low leakage current for the power rectifier. The power loss incurred during the second segment is given by 1032 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES PL,R ? 2 (turn-off ) = 1 t6 ? t5 I MVON,D . 2 T (...