MOSFETsemiconductor device modelstunnelling/ Fowler-Nordheim tunnelingMOS transistorstwo-dimensional simulationgate currentFIELDAYcurrent densitiesElectron and hole current densities across the gate oxide layer of MOSFETs due to Fowler-Nordheim tunneling are calculated by employing the well-known two-dimensional...
A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2- mu m double... A Thomsen,Brooke, M.A. - 《IEEE Electron Device Letters》 被引量: 120发表: 1991年 Wear-out of ultra-thin gate oxides during high...
The gate direct tunneling current in ultra-thin oxide is computed with different device parameters. 采用自洽解方法求解一维薛定谔方程和二维泊松方程,得到电子的量子化能级和相应的浓度分布,利用MWKB方法计算电子隧穿几率,从而得到不同栅偏置下超薄栅介质MOSFET的直接隧穿电流模型。 更多例句>> 6...
A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions o
Fowler-Nordheim隧道效应MOSFET场效应晶体管金属氧化物半导体集成电路In this paper, the change in parameters of FN tunneling current has been investigated. Experiments show that parameters (I ln(A)l and B) decrease during ini-tial stress stage and then saturates after long stress time.By fitting meth...
p-MOSFETgate currentfloating bulkn-wellgate-to-drain overlaptwo-dimensional device simulations/ B2560R Insulated gate field effect transistorsA new mechanism of Fowler-Nordheim tunneling limited band-to-band tunneling (FNBB) has been identified to be responsible for the gate current measured from p-...
Fowler-Nordheim tunnelingtrapMOSFET (metal-oxide-semiconductor field-effect transistor)THIN GATE OXIDESDEGRADATIONSILICONGENERATIONINJECTIONDEFECTSEEPROMtext>In this paper, the change in parameters of FN tunneling current has been investigated. Experiments show that parameters ( In(A) and B) decrease during...
In this paper, the change in parameters of FN tunneling current has been investigated. Experiments show that parameters (I ln(A)l and B) decrease during ini-tial stress stage and then saturates after long stress time.By fitting method based on two exponential decay func-tions, we found that...
Thin (2.5 nm) and thick (6 nm) gate oxide MOSFETs were utilized to induce direct and Fowler-Nordheim (FN) tunneling, respectively. The threshold voltage and subthreshold swing in the thick oxide MOSFET was more significantly affected by NBTS than that of the thin oxide MOSFETs. The d...
Silicon Nanocrystal Charging by Hot electron Tunneling These hot carriers are generated by Fowler Nordheim (FN) injection or by application of a drain bias in a mosfet. While the former essentially yields carriers of a fixed energy entering the oxide conduction band, the latter approach ... R ...