where C and β are constants, A is the area of the tunneling barrier, F is the electric field strength, and φ is the barrier height. The exponential term in the equation indicates the strong dependence of the tunneling current on the barrier height. The FN tunneling mechanism has significan...
FN TunnelingPhotovoltaic CellHydrogenated amorphous carbon nitride (a-CNx:H) films were formed on Al films deposited on Si or glass (SiO2) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. a-CNx:H films ...
I am trying to model Fowler-Nordheim (FN) tunneling on semiconductor other than Si, like AlN. To do so, I prepared a simple and straight forward structure which was simply based on one domain, i.e., AlN that has two metal contacts to apply voltage. This structure didn’t work because...
The unique feature of FN tunneling induced CTP is the ability to turn on and off the charge transfer by varying the intensity of an external light source, and this could inspire the development of novel quantum devices, such as high speed switches and modulators....
(e) its equivalent circuit where the leakage current IFN is implemented by (f) the electron transport across a Fowler–Nordheim (FN) tunneling barrier; g implementation of the FN tunneling based DAM where dynamic states g1–g3 determines the energy dissipated (ΔE1,ΔE2,ΔE3) per memory ...
(http:\/\/.iue.tuwien.ac.at\/phd\/gehring\/node112.html"\l"f:directFnBarrier)).Theinnermostintegralcanthenbeevaluatedanalyticallyforthreedistinctregions(A.4)Thisleadstothefollowingexpressionforthecurrentdensity:(A.5)Theleftintegralrepresentstunneling...
12.5 nm a-CN:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.Haruhisa Kinoshita...
(Instituteo1:Microelectronics,PekingUniversity,Bering100871,China)Abstract——InthisPaPer,thechangeinparametersofFNtunnelingcurrenthasbeeninvestigated.Experimentsshowthatparameters(1ln(A)landB)decreaseduringini-tialstressstageandthensaturatesafterlongstresstime.Byfttingmethodbasedontwoexponentialdecayfunc-tions,we...
We demonstrate significant Fowler-Nordheim (FN) tunneling across Al/Al2O3/ZnO metal-insulator-semiconductor (MIS) and Ag/ZnO metal-semiconductor (MS) nanojunctions. The transport properties of ZnO nanostructures in the form of urchins and randomly distributed nanorods were investigated in terms of ...
A theoretical investigation on the gate polarity dependence of Fowler–Nordheim (FN) tunneling electron initiated impact ionization probabilities in the bulk silicon dioxide (SiO2) films as well as hole injection from the anode material (n+ poly-Si gate or silicon substrate) in metal-oxide-silicon...