where C and β are constants, A is the area of the tunneling barrier, F is the electric field strength, and φ is the barrier height. The exponential term in the equation indicates the strong dependence of the tunneling current on the barrier height. The FN tunneling mechanism has significan...
US5963476 * Nov 12, 1997 Oct 5, 1999 Macronix International Co., Ltd. Fowler-Nordheim (F-N) tunneling for pre-programming in a floating gate memory deviceFowler-Nordheim (FN) tunneling for pre-programming in a floating gate memory device. Hung, C.H,Shiau, T.H,Cheng, Y.W,Lee, I.L...
Fowler-Nordheim (FN) tunneling is characterized by (1) the triangular shape barrier [62], and (2) tunneling to occur through only a part of the insulator layer. After tunneling through this triangular barrier, the rest of the insulator does not hinder the current flow. Direct tunneling is ...
I am trying to model Fowler-Nordheim (FN) tunneling on semiconductor other than Si, like AlN. To do so, I prepared a simple and straight forward structure which was simply based on one domain, i.e., AlN that has two metal contacts to apply voltage. This structure didn’t work because...
(e) its equivalent circuit where the leakage current IFN is implemented by (f) the electron transport across a Fowler–Nordheim (FN) tunneling barrier; g implementation of the FN tunneling based DAM where dynamic states g1–g3 determines the energy dissipated (ΔE1,ΔE2,ΔE3) per memory ...
The unique feature of FN tunneling induced CTP is the ability to turn on and off the charge transfer by varying the intensity of an external light source, and this could inspire the development of novel quantum devices, such as high speed switches and modulators....
Estimate of Width of Transition Region of Barrier for Thin Film Insulator MOS Structure Using Fowler-Nordheim Tunneling Current利用FN电流估计薄栅MOS结构栅氧化层的势垒转变区的宽度材料科学基础学科薄膜生长动力学Monte Carlo模型二维ES势垒形貌?考虑了原子在发生层间扩散过程中ehrlich--schwoebel势垒的作用,构造了...
A theoretical investigation on the gate polarity dependence of Fowler–Nordheim (FN) tunneling electron initiated impact ionization probabilities in the bulk silicon dioxide (SiO2) films as well as hole injection from the anode material (n+ poly-Si gate or silicon substrate) in metal-oxide-silicon...
(only SG0˜SG3are shown). A gate voltage of 8V is applied to the control gate of the bit line selection transistor SGB. Under this condition, electrons are injected into the floating gates of all of the memory transistors through the FN tunneling mechanism so as to adjust the threshold...
12.5 nm a-CN:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.Haruhisa Kinoshita...