Multiple layer of Al or ITO (anode)/50nm-SiO2/a-CNx:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CNx:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and ...
Multiple layer of Al or ITO (anode)/50nm-SiO/a-CN:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron...
from the traps (Poole-Frenkel effect), and is not direct or Fowler-Nordheim tunneling, as typically occurs in thermal silicon oxide with similar thickness... A Morales-Acevedo,G Santana,E Morales-Tzompa - 《Thin Solid Films An International Journal on the Science & Technology of Thin & Thick...
Carrier injection into semiconducting polymers: Fowler-Nordheim field-emission tunneling Carrier injection at the metal/semiconductor interface has been analyzed using diode structures fabricated from semiconducting polymers. The current versus... AJ Heeger,ID Parker,Y Yang - 《Synthetic Metals》 被引量:...
Kondo Effect from a Tunable Bound State within a Quantum Wire Fowler-Nordheim tunnelingPoole-Frenkel emissionelectric breakdown fieldspace-charge limitedWe investigate the conductance of quantum wires with a variable open ... F Sfigakis,CJB Ford,M Pepper,... - 《Physical Review Letters》 被引量:...
Both of these requirements are met by FN-DAM due to the physics of electron tunneling. In fact, the effect of calibration due to learning can be seen in the FN-DAM neural network training (Fig. 6d, e) where the classification accuracy is independent of the initial choice of the FN-DAM...
9d). However, at these scales, the effect of other processes like direct tunneling cannot be ignored. Exploring different materials could have significant impact on both k1 and k2, as they affect the parameters α and β (Eqs. (7) and (11)). When the input signal is a single pulse, ...
Fowler-Nordheim tunneling-temperature effectFN parameters (moxmscphi(B)V-corr) simultaneously extractedFlat band voltage V-FBSurface potential psi(S)Vertical optimization methodThe current voltage characteristics versus temperature were measured in MOS (Metal Oxide Semiconductor) capacitor structures in the ...
The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations. This work explores the effect of edge thinning profile in tunnel-oxide on...
Analytic expression for the Fowler–Nordheim V – I characteristic including the series resistance effectMOSFowler-NordheimTunnelingIt is shown in this communication that the Fowler–Nordheim (FN) tunneling expression for the current–voltage ( I– V) characteristic can be analytically inverted so that...