Fowler-Nordheim tunneling-temperature effectFN parameters (moxmscphi(B)V-corr) simultaneously extractedFlat band voltage V-FBSurface potential psi(S)Vertical optimization methodThe current voltage characteristics versus temperature were measured in MOS (Metal Oxide Semiconductor) capacitor structures in the ...
Fowler-Nordheim (FN) tunneling is characterized by (1) the triangular shape barrier [62], and (2) tunneling to occur through only a part of the insulator layer. After tunneling through this triangular barrier, the rest of the insulator does not hinder the current flow. Direct tunneling is ...
Multiple layer of Al or ITO (anode)/50nm-SiO/a-CN:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron...
9d). However, at these scales, the effect of other processes like direct tunneling cannot be ignored. Exploring different materials could have significant impact on both k1 and k2, as they affect the parameters α and β (Eqs. (7) and (11)). When the input signal is a single pulse, ...
Both of these requirements are met by FN-DAM due to the physics of electron tunneling. In fact, the effect of calibration due to learning can be seen in the FN-DAM neural network training (Fig. 6d, e) where the classification accuracy is independent of the initial choice of the FN-DAM...
(US: "tunneling") The quantum mechanical effect exploited in EAPROM and Flash Erasable Programmable Read Only Memory. It differs from Frenkel-Pool Tunnelling in that it does not rely on defects in the semiconductor. This article is provided by FOLDOC - Free Online Dictionary of Computing (foldoc...
Multiple layer of Al or ITO (anode)/50nm-SiO2/a-CNx:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CNx:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and ...
The edge thinning of tunnel oxide is numerically found to increase the Fowler-Nordheim (FN) tunneling gate current in NAND-type Flash cells during programming and erasing operations. This work explores the effect of edge thinning profile in tunnel-oxide on...
tunnelingthermionic emissionmobilityMetal-Insulator-Metal type devices based on poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) have been examined to understand the effect of degradation on the charge injection and transport phenomena. The Fowler Nordheim (FN) plots ...
物理解释测量栅A method is given for measuring the thickness of gate oxide and the effective electron mass in the conduction band of gate oxide in MOS structure using the extrema of Fowler\\|Nordheim tunneling current oscillations. Interference method is introduced to analyze the process of electron...