A new flash memory cell structure and operational bias is based on the use of a triple well flash memory cell which allows pre- programming by Fowler Nordheim (F-N) tunneling over blocks of cells at a time. The floating gate memory cell is made in a semiconductor substrate having a first...
,F Shone,RL Wan 国省代号: WO 被引量: 99 摘要: A new flash memory cell structure and operational bias is based on the use of a triple well flash memory cell which allows pre-programming by Fowler Nordheim (F-N) tunneling over blocks of cells at a time. The floating gate memory cell...
FOWLER-NORDHEIM (F-N) TUNNELING FOR PRE-PROGRAMMI 专利名称：FOWLER-NORDHEIM (F-N) TUNNELING FOR PRE-PROGRAMMING IN A FLOATING GATE MEMORY DEVICE 发明人：HUNG, Chun, Hsiung,SHIAU, Tzeng- Huei,CHENG, Yao-Wu,LEE, I.-Long,SHONE,Fuchia,WAN, Ray-Lin 申请号：US1997003861 申请日：19970310 公开...
(e) its equivalent circuit where the leakage current IFN is implemented by (f) the electron transport across a Fowler–Nordheim (FN) tunneling barrier; g implementation of the FN tunneling based DAM where dynamic states g1–g3 determines the energy dissipated (ΔE1,ΔE2,ΔE3) per memory ...
Under the assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide,the data retention time of EEPROM cells is derived,and the experience formula is check. 在假定电荷流失机制为Fowler-Nordheim隧穿效应的情况下,推出了EEPROM单元在给定外加电压下的电荷保持时间,并通过...
Determination of the Fowler–Nordheim tunneling parameters from the Fowler–Nordheim plot A wide range of values have been reported for the Fowler–Nordheim (F–N) parameters A and B for the tunneling emission in MOS capacitor structures. The pa... YL Chiou,JP Gambino,M Mohammad - 《Solid St...
Fowler–Nordheim tunneling of holes through thermally grown silicon dioxide on 6H–silicon carbide is reported. Oxides of 5.2, 10, and 14.2 nm thickness were grown on thep+face of ap+nSiC junction. Thep+njunction served to separate the electron and hole tunneling currents. Hole tunneling was fo...
It was demonstrated that the resistive switching mechanism of the TiO2 nanosheets memristor devices arises from Fowler-Nordheim tunneling during positive bias ... LHW Wang - Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics 被引量:...
3) Fowler-Nordheim(F-N) tunneling FOWLER-NORDHEIM(F-N)隧穿4) Fowler Nordheim Fowler-Nordheim5) Fowler-Nordheims theory Fowler-Nordheim理论6) fowler-nordheim phenomenon Fowler-Nordheim 效应补充资料:70/30费率公式 70/30费率公式 【70150费率公式】承保旧飞机或按原价贬值的飞机时,通常采取的调整...
FOWLER-NORDHEIM (F-N) TUNNELING FOR PRE-PROGRAMMING IN A FLOATING GATE MEMORY DEVICEA floating gate memory cell having a first well (31), second well (30) source/drain regions (13/14), a floating gate (15), a control gate (17) and circuits to induce ...