fowler—nordheim隧穿原理fowler—nordheim隧穿原理 Fowler-Nordheim (FN) tunneling is a quantum mechanical phenomenon that allows electrons to tunnel through a potential barrier. It is named after Ralph H. Fowler and Lothar Wolfgang Nordheim, who developed the theoretical framework to describe the ...
场发射特性也称为Fowler-Nordheim隧道效应，低维材料中的电子在外加电场作用下穿过势垒的过程。在金属半导体异质结和重参杂半导体中，这种量子隧穿效应起着重要的作用。We derive of the tunnel probability from the time independent Schrödinger equation:[3.1.44]which can be rewritten as [3.1.45]Assuming ...
Nordheimtunneling-istheprocesswherebyelectronstunnelthroughabarrierinthepresenceofahighelectricfield.Thisquantummechanicaltunnelingprocessisanimportantmechanismforthinbarriersasthoseinmetal-semiconduictorjunctionsonhighly-dopedsemiconductors.场发射特性也称为Fowler-Nordheim隧道效应,低维材料中的电子在外加电场作用下穿过...
A new mechanism of Fowler-Nordheim tunneling limited band-to-band tunneling (FNBB) has been identified to be responsible for the gate current measured from p-MOSFETs with the bulk (n-well) floated. This mechanism has been found to occur in the gate-to-drain overlap region. Two-dimensional ...
A new flash memory cell structure and operational bias is based on the use of a triple well flash memory cell which allows pre-programming by Fowler Nordheim (F-N) tunneling over blocks of cells at a time. The floating gate memory cell is made in a semiconductor substrate having a first ...
Fowler–Nordheim tunneling of holes through thermally grown silicon dioxide on 6H–silicon carbide is reported. Oxides of 5.2, 10, and 14.2 nm thickness were grown on thep+face of ap+nSiC junction. Thep+njunction served to separate the electron and hole tunneling currents. Hole tunneling was fo...
FOWLER-NORDHEIM (F-N) TUNNELING FOR PRE-PROGRAMMI 专利名称：FOWLER-NORDHEIM (F-N) TUNNELING FOR PRE-PROGRAMMING IN A FLOATING GATE MEMORY DEVICE 发明人：HUNG, Chun, Hsiung,SHIAU, Tzeng- Huei,CHENG, Yao-Wu,LEE, I.-Long,SHONE,Fuchia,WAN, Ray-Lin 申请号：US1997003861 申请日：19970310 公开...
Send Private MessageFlag post as spam I am trying to model Fowler-Nordheim (FN) tunneling on semiconductor other than Si, like AlN. To do so, I prepared a simple and straight forward structure which was simply based on one domain, i.e., AlN that has two metal contacts to apply voltage...
fowler-nordheim tunnelingnonvolatile memorymodelcapacitive coupling ratioTCAD simulationAn SSG EEPROM (Spacer Select Gate Electrically Erasable Programmable Read ... YS Bahng - 《Solid State Electronics》 被引量: 1发表: 2009年 Embedded non-volatile memory with single polysilicon layer memory cells program...