PROBLEM TO BE SOLVED: To provide a floating gate field effect transistor as a nonvolatile data storage device wherein writing/erasing times practically are reduced as compared with a conventional technique in the state that at least the period of a holding time is not changed.SPECHT MICHAEL...
PURPOSE:To reduce variation in electric characteristics and to improve producibility by separating a gate into a fixed gate and a floating gate through a low density layer of a polarity opposite to that of a gate at a channel section. CONSTITUTION:At an enhancement type power MOS FET, the gat...
The invention provides a floating boom quick storing field effect transistor and belongs to the field of the micro-electronic semiconductor technology. The floating boom quick storing field effect transistor includes the source region, drain region, body and top grid. The top grid is composed of ...
A field effect transistor has a floating gate with an extended portion. A selectively chemoreceptive finger or layer is electrostatically coupled to the extended portion of the floating gate, and induces a voltage on the gate in response to selected chemicals or other conditions affecting the finger...
transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路(DTL)中的二极管,改为使用多发射极晶体管而构成。TTL电路于1962年研制成功,基本门电路的结构和元件参数,经历了3次大的改进。同DTL电路相比,TTL电路速度显著提高,功耗大为降低。仅第一代TTL...
1) floating gate fet 浮栅场效应晶体管 2) grid field effect transistor 栅场效应晶体管 例句>> 3) bipolar photo gate FET 双极光栅场效应晶体管 4) dual material gate field effect transistor(DMG MOSFET) 异质双栅场效应晶体管 5) multi gate FET ...
Structures for an extended drain field effect transistor and method of making an extended drain field effect transistor. A source region is coupled to a semiconductor layer, a drain region is coupled to the semiconductor layer and a first gate structure is arranged over a channel region of the ...
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) In a MOSFET, electrons (students!) can be allowed to flow from the source terminal to the drain terminal by the application of charge to the gate terminal. This charge creates anelectric fieldwhich alters the behaviour of the silicon lay...
et al. MoS2 nanosheets for top gate nonvolatile memory transistor channel. Small 8, 3111–3115 (2012). Article Google Scholar Lee, Y. T. et al. Nonvolatile ferroelectric memory circuit using black phosphorus nanosheet-based field-effect transistors with P(VDF-TrFE) polymer. ACS Nano 9, ...
METHOD OF PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTOR CIRCUIT A method for the manufacture of integrated MOS-field effect transistor circuits in silicon gate technology and wherein diffusion source and drain zones are coated with a high melting point silicide as low-impedance printed conductors. ...