accepted June 17, 2015; published online October 12, 2015 Abstract In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flip- flop (S2CFF) based on high-performance fin-type field-effect transistors (FinFETs) to achieve high speed and ultralow power co...
A method for forming fin field effect transistors includes epitaxially growing source and drain (S/D) regions on fins, the S/D regions including a diamond-shaped cross section and f
20070045748Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures2007-03-01Booth, Jr. et al. 7180134Methods and structures for planar and multiple-gate transistors formed on SOI2007-02-20Yang et al.25...
wavefrequenciesandbeyond.INTRODUCTIONAswescaletodeepsub-micron(DSM)technology,transistorunitygainfrequenciesincrease,enablingthedesignofCMOScircuitsforRFandmm-waveapplicationsupto95GHz.However,suchhigh-frequencyCMOStransistorshavelimitedgain,resultinginpooroutputpowerefficiency.SuccessfulimplementationofDSMCMOSinmm-wave...
An analog integrated circuit is disclosed in which short channel transistors are stacked on top of long channel transistors, vertically separated by an insulating layer. With such a
One or more embodiments relate to a memory device, comprising: a memory element; and a FinFET select device including a fin, a gate line supported by the fin, and a contact element coupled between a s
20040063286 Field effect transistors having multiple stacked channels 2004-04-01 Kim et al. 6583015 Gate technology for strained surface channel and strained buried channel MOSFET devices 2003-06-24 Fitzgerald et al.Other References: Orlowski et al., “Si, SiGe, Ge, and III-V Semiconductor Nanome...
While the present application has been particularly shown and described with respect to preferred embodiments thereof, it will be understood by those skilled in the art that the foregoing and other changes in forms and details may be made without departing from the spirit and scope of the present...