而且U%也能得到保障,而Fin- pitch就取决于形成spacer的那条line的宽度,当然这个pitch也不是越小越好,要根据fin的高度来balance,因为要考虑等下 Source/Drain离子植入的Shielding Effect。 另外在FinFET的结构上,还有Double-FinFET (DG-FinFET)和Tri-FinFET之分,主要差别在于那个Fin被Gate包围的部分有三个面,两侧...
Leveraging the maturity of the 20nm-LPM technology will enable a smooth transition for customers looking to tap the benefits of FinFET SoCs as soon as possible.&The FinFET architecture takes the traditional two-dimensional transistor design and turns the conductive channel on its side, resulting ...
FinFET(Fin Field-Effect Transistor)又称三维晶体管,是一种新型晶体管结构,在每个晶体管的通道区域周围,有一些小鱼鳍状的结构,称为Fin(鳍片)。FinFET相比传统晶体管具有更小的截止电压、更低的漏电流和更高的开关频率。 FD-SOI(Fully Depleted Silicon-On-Insulator)是指将SOI制程进一步升级,将硅层尽量加工薄,从...
FinFET(Fin Field-Effect Transistor)是一种三维晶体管结构,其带来了新的寄生参数,需要进行提取和建模。寄生参数是指在电路元件中存在且具有一定影响的电阻、电容和电感等参数。对于FinFET单元结构,其中的寄生参数包括通道电阻、接触电阻、源/漏接触电阻、栅氧电容、外延电阻等,下面将对这些寄生参数进行详细的提取方法进...
FinFET(Fin Field-Effect Transistor,鳍式场效应晶体管)与MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor,金属-氧化物-半导体场效应晶体管)在结构和工作原理上有一些显著的区别。以下是详细解析: FinFETMOSFET 结构特点 沟道区域被设计成三维的鳍状结构,栅极环绕在鳍状结构的三个面上,提供了更好的栅极控制...
FinFET(Fin Field Effect Transistor)是一种新型的三维晶体管结构,是CMOS技术的发展之一。与传统的平面CMOS晶体管相比,FinFET在三维结构上有了很大的改进,具有更高的集成度和更低的功耗。在集成电路设计中,FinFET对FP(Floorplanning)也提出了一些新的要求。本文将逐步回答关于FinFET对FP的要求,并详细探讨这些要求背后...
Finfet技术(3D晶体管)详解 Intro_to_FinFet Introduction to FinFet Haiying Zhao
Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full charac
(1. China Academy of Space Technology, Beijing 100094, China; 2. College of Computer Science and Technology,National University of Defense Technology, Changsha 410073, China)Abstract: Fin field-effect transistor (FinFET) devices have become an important choice for future space applications due to ...
A new 30-ps Si bipolar IC technology has been developed by scaling down a bipolar transistor's lateral geometry and forming shallow junctions. The n-p-n tr... S Konaka,Y Yamamoto,T Sakai - 《Extended Abstracts of Conf Solid State Devices & Mat》 被引量: 267发表: 1984年 A 30-ps Si...