Colinge, FinFETs and Other Multi-... FH Ismail 被引量: 1发表: 2010年 Insulated gate field effect transistor having passivated schottky barriers to the channel A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein ...
accepted June 17, 2015; published online October 12, 2015 Abstract In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flip- flop (S2CFF) based on high-performance fin-type field-effect transistors (FinFETs) to achieve high speed and ultralow power co...
In planar transistors, a ‘gate’ electrode above a conducting channel, separated from it by an insulating layer, creates an electric field that controls the flow of charge carriers between source and drain through that channel. As the minimum dimensions of IC processes have shrunk, unwanted leaka...
wavefrequenciesandbeyond.INTRODUCTIONAswescaletodeepsub-micron(DSM)technology,transistorunitygainfrequenciesincrease,enablingthedesignofCMOScircuitsforRFandmm-waveapplicationsupto95GHz.However,suchhigh-frequencyCMOStransistorshavelimitedgain,resultinginpooroutputpowerefficiency.SuccessfulimplementationofDSMCMOSinmm-wave...
already put its version of FinFET transistors—which Intel calls tri-gate transistors—into production. TSMC, Samsung, UMC and Globalfoundries all want to put FinFET technology into production in 2014. Foundry customers that want to get in on the ground floor of this technology must act quickly...
(3D) FinFET device architecture. Relative to planar transistors, FinFETs offer improved channel control and, therefore, reduced short channel effects. While the gate in a planar transistor sits above the channel, the gate of a FinFET wraps around the channel, providing electrostatic control from ...
Here, vertically stacked nanosheet transistors can come to the rescue. They can be considered a natural evolution of the FinFET device. Just imagine placing a FinFET on its side, and dividing it into separate horizontal sheets, which make up the channels. A gate now...
Gate Source Drain 3DviewofFinFET 3Dviewofmulti-finFinFET WhatdoesFinFetlooklike Moore’slawandscalingtheory Idealscaling:ReduceW,LbyafactorofaReducethethresholdvoltageandsupplyvoltagebyafactorofaIncreasingallofthedopinglevelsbya(W,L,tox,VDD,VTH,etc,arescaleddownbyafactora)Foraidealsquare-lawdevice,Id...
7396726Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regions2008-07-08Oh et al.438/280 20080157225SRAM and logic transistors with variable height multi-gate transistor architecture2008-07-03Datta et al. ...
An analog integrated circuit is disclosed in which short channel transistors are stacked on top of long channel transistors, vertically separated by an insulating layer. With such a