Graphene field-effect transistors: the road to bioelectronicsgraphenefield-effect transistorbioelectronicsbiosensingcell interfacingGraphene field-effect transistors (GFET) transduce biomolecule charges or cellular voltage signals into a change in their current-voltage (I-V) characteristics. Inherent from the ...
The invention discloses a graphene field-effect transistor linearly doped with a bi-material gate. On the basis of a quantum mechanics nonequilibrium green function theoretical framework, a transport model suitable for the graphene field-effect transistor is built through self-consistent solution ...
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is ...
(Au NPs) to functionalize and bind a DNA aptamer to the graphene surface. The graphene is employed in a liquid gated field-effect transistor (FET) configuration to detect the hybridization of the complementary DNA strand, as well as the protein streptavidin, at attomolar level (aM, 10−18...
Graphene field-effect mobility >1000 cm2/V.s Residual charge carrier density <2 x 1012 cm-2 Dirac point 10-40 V Yield >75 % Device Cross-Section Typical Characteristics Output curve (left) and transfer curve measured at source-drain voltage of 20 mV (right), measured at room temperature ...
Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor 这篇论文发表在Light:Science&Application(2020)上,是一篇直接观测石墨烯场效应晶体管等离子波的论文。 本论文重点的参数是Vpl,这个参数是指随着栅极电压变化而变化的等离子波传播速度。
FigureS2. Although graphene and MoS2are vertically stacked, the term ‘lateral heterostructure ‘refers to the lateral transistor configuration wherein the MoS2channel can be modulated between two graphene contacts. Computational methods The device model required a correct description of the physics and ...
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies as well as energy gap in different sections of the...
To evaluate the mobility of few-layer graphene sheets (FLGS), a graphene-based high-k ferroelectric field-effect transistor (GFE-FET) has been fabricated using a sol-gel spin coating method, where FLGS and high-k ferroelectric material like barium zirconium titanate/barium calcium titanate (BZT/...
A field effect transistor includes a substrate, a first graphene (Gr) layer on the substrate, a second graphene (Gr) layer on the substrate, a fluorographene (GrF) layer on the substrate and between t