Electric field-induced (EFI) reduction of graphene oxide (GO) was performed by conductive atomic force microscopy (C-AFM) in order to create a reduced GO (rGO) p–n nanopattern diode in a dry and non-destructive single-pot process. Single GO sheets were deposited by the Langmuir–Blodgett...
Electric field-induced (EFI) reduction of graphene oxide (GO) was performed by conductive atomic force microscopy (C-AFM) in order to create a reduced GO (rGO) p–n nanopattern diode in a dry and non-destructive single-pot process. Single GO sheets were deposited by the Langmuir–Blodgett...
Electric-field-induced rich magneto-absorption spectra of ABC-stacked trilayer grapheneCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale PhysicsThe magneto-optical spectra of ABC-stacked trilayer graphene are enriched by an electric field. A lot of prominent absorption peaks, ...
graphene electric field can be considered as a force field for the single adatom at each position (Hellman–Feynman theorem21). On the basis of the observed graphene electric field image, the stable adsorption sites for the adatom are expected to be the positions of the minimum electric field ...
Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ...
Ferroelectricity in crystalline hafnium oxide has attracted considerable attention because of its potential application for memory devices. A recent breakthrough involves electric-field-induced crystallization, allowing HfO2-based materials to avoid high
Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2. We show that GaN-Al2O3-MoS2 and GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunctions can be created with excellent rectification behaviour and large vertical electric field across the multi-layer ...
Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external electric field perpendicular to the layer plane. We found that, ...
A 'High Electric Field' refers to an intense electrical field applied across a medium, leading to phenomena such as accelerated wave fronts, wave splitting, formation of crescent waves, and generation of complex spatial patterns in reaction-diffusion systems. ...
On pristine graphene, the local gating applied by the tip induces a shift of the molecular levels of adsorbed molecules and can be used to control their charge state. Ab initio calculations show that under the application of an electric field, the hybrid molecule/graphene system behaves like an...