Professor Tsumoru Shintake of Okinawa Institute of Science and Technology (OIST) has proposed an extreme ultraviolet (EUV) lithography technology that surpasses the standard in semiconductor manufacturing.
Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry as the leading-edge lithography technique for continued miniaturization of semiconductor devices in line with Moore's law. EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve...
An extreme ultraviolet (EUV) lithography tool using 13.4 nm radiation is being developed by a consortium of integrated circuit (IC) manufacturers to support 100 nm imaging for integrated circuit production. The 4×, 0.1 NA alpha tool has a ≫1 μm depth of focus, all reflective optics, a...
The report "Extreme Ultraviolet (EUV) Lithography Market by Component (Light Sources, Optics, Masks, EUV Metrology, EUV Sensors, EUV Subassembly) and End User (Integrated Device Manufacturers (IDMs), Foundries) - Global Forecast to 2029" The EUV lithography market is expected to reach USD 22.69...
Major Extreme Ultraviolet (EUV) Lithography companies include: ASML (Netherlands) Carl Zeiss AG (Germany) NTT Advanced Technology Corporation (Japan) KLA Corporation (US) ADVANTEST CORPORATION (Japan) Ushio Inc. (Japan) SUSS MicroTec SE (Germany) AGC Inc. (Japan) Lasertec Corporation (Japan) TOPPA...
Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser to create a plasma. This, in turn, helps emit a shor...
《ExtremeUltravioletLithography》作者:McGraw-HillProfessional,出版社:2009年4月,ISBN:2115.10。MasterExtremeUltravioletLithographyTechniquesProdu
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United States Patent US11086237 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography. The resolution limit of present 0.3 NA 13.5 nm wavelength microexposure tools is compared to next-generation lithography research requirements. Findings su... Michael,Goldstein,Russ,... - 《Optics Letters》 被引量: 25...