tracking ultrafast bond dissociation dynamics at 0.1 a resolution by femtosecond extreme ultraviolet absorption spectroscopy.[2018][j phys chem let 热度: volume7–story4 4november2009 ExtremeUltravioletLithography: TowardstheNextGenerationof IntegratedCircuits ...
Extreme Ultraviolet Lithography 电子书 读后感 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 评分☆☆☆ 类似图书 点击查看全场最低价 出版者:作者:Wu, Banqiu/ Kumar, Ajay出品人:页数:482译者:出版时间:2009-5价格:$ 141.25装帧:isbn号码:9780071549189...
a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. 相关学科: 学科讨论 暂无讨论内容,你可以发起讨论推荐文献 发布年度 会议/ 期刊 按被引用数 Structure of the solar chromosphere. III. Models of the EUV brightness components of ...
EUV lithography is a soft X-ray technology. Description Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser ...
shined through the mask. Thetransmissive portions of the mask, which are transparentto the selective wavelength, allow the light to passthrough the mask. The absorbing portions, which areopaque to and absorb the selected wavelength, blockthe transmission. The pattern on the mask is thereby rep-...
Summary This chapter contains sections titled: Introduction to extreme ultraviolet lithography The electromagnetic properties of materials and the complex index Reflective optical elements for EUV lithography Reflective masks for EUV lithography Modeling and simulation for EUV lithography EUV lithography sources ...
FIG. 1 is a cross-sectional view of a portion of a prior art lithography mask, as may be used in an extreme ultraviolet lithography (EUVL) process. FIG. 2 is a cross-sectional view of an initial mask structure in a stage of fabrication, according to embodiments of the present disclosure...
United States Patent US9316900 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
An extreme ultraviolet (EUV) lithography tool using 13.4 nm radiation is being developed by a consortium of integrated circuit (IC) manufacturers to support 100 nm imaging for integrated circuit production. The 4×, 0.1 NA alpha tool has a ≫1 μm depth of focus, all reflective optics, a...
Projection lithography is driven to shorter wavelengths to meet the demand for smaller critical dimensions in advanced computer chips. This trend logically extends to the extreme ultraviolet (EUV) region, where reduction imaging can be achieved using all-reflective optics. The wavelength region of prima...