energy gapgermaniump-n homojunctionssilicon/ semiconductorsenergy gaptemperature characteristicsreverse saturation currentp- n junctionsforward-bias voltageUsing temperature characteristics obtained from the reverse saturation current of p- n junctions and the forward-bias voltage, the energy gaps of Si and ...
Mg2Si0.3Sn0.7was found to possess a smaller band gap compared to Mg2Si0.4Sn0.6and Mg2Si0.5Sn0.5, which is promising for obtaining higher electrical conductivity[40]. As a comparison, band gaps for well-known semiconductors are 1.12eV for silicon (Si), 0.7eV for germanium (Ge) and 0.08...
Examples of indirect band gap semiconductor materials are silicon (Si), germanium (Ge), aluminum arsenide (AlAs) and gallium phosphide (GaP). Because of the reduced absorption coefficients, silicon layers in photodiodes and photovoltaic cells, for example, need to be substantially thicker – often ...
Bridging the performance gap of the electrocatalyst between the rotating disk electrode (RDE) and mem-brane electrode assembly (MEA) level testing is the key to reducing the total cost of proton exchange membrane fuel cell (PEMFC) vehicles. Presently, platinum metal accounts for ~42% of the tot...
Two-and one-dimensional honeycomb structures of silicon and germanium. Phys. Rev. Lett. 102, 236804 (2009). Article CAS Google Scholar Dávila, M., Xian, L., Cahangirov, S., Rubio, A. & Le Lay, G. Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene...
A comprehensive investigation on hydrogen grabbing by SiO-GeO was carried out, including DFT computations at the CAM-B3LYP-D3/6-311+G (d,p) level of theory. The data shows that if silicon elements are replaced by germanium, the H-grabbing energy will be ameliorated. Electromagnetic and therm...
The analysis focuses on critical materials: Rare Earth Elements, Nickel, Silicon, Graphite, Magnesium, Gallium, Germanium, Indium, Aluminum, Cobalt, Lithium, Zinc, and Tellurium used in wind turbines, electric vehicles, lithium-ion batteries and solar photovoltaic panels. We assess their social ...
A molecular dynamics simulation method is used to construct the displacement cascades formed in germanium and silicon by self-ions with energy in the range 50500 eV. A simple interatomic potential is presented which empirically accounts for the relative structural difference in the two targets. The ...
Medium energy ion implantation of germanium into heated silicon.Investigates the germanium silicon layers implanted with germanium peak concentration at different energies using potential of the heated implant technique. Characteristic of better quality layers of room temperature implants; Investigation of ...
The minimum room temperature band-gap energy values for some common semiconductors are 1.12 eV for silicon [61], 0.67 eV for germanium [61] and 1.35 eV for gallium arsenide [61]. For photovoltaic devices, the band-gap energy needs to be close to the peak of the energy range of visible ...