Effect of post-annealing temperature on nano-structure and energy band gap of indium tin oxide (ITO) nano-particles synthesized by polymerizing–complexing sol–gel method[J] . R. Sarhaddi,N. Shahtahmasebi,M. Rezaee Rokn-Abadi,M.M. Bagheri-Mohagheghi.Physica E: Low-dimensional Systems and ...
We report on the PAMBE-growth of high-quality InN layers with In polarity and on the influence of growth parameters such as Indium-to-nitrogen flux ratio a... A Knuebel,R Aidam,V Cimalla,... - 《Physica Status Solidi》 被引量: 30发表: 2010年 Band gap bowing and exciton localization...
annealingcrystal atomic structure of inorganic compoundsCVD coatingsdiffusion in solidsenergy gapgallium compoundsIII-V semiconductorsindium compounds... P Gavrilovic,FP Dabkowski,K Meehan,... - 《Journal of Crystal Growth》 被引量: 126发表: 1988年 Determination of the band structure of disordered AlG...
Materialband gap typeband gap energybandgap wavelength lead selenide (PbSe) direct 0.27 eV 4.57 μm lead telluride (PbTe) direct 0.32 eV 3.86 μm indium arsenide (InAs) direct 0.36 eV 3.43 μm lead sulfide (PbS) direct 0.37 eV 3.34 μm germanium (Ge) indirect 0.67 eV 1.84 μm gallium ...
BAND STRUCTUREELLIPSOMETRYENERGY GAPGALLIUM PHOSPHIDESINDIUM PHOSPHIDESINTERBAND TRANSITIONSSpectroscopic‐ellipsometry (SE) and thermoreflectance (TR) spectra of (... S Ozaki,S Adachi,M Sato,... - 《Journal of Applied Physics》 被引量: 61发表: 1996年 Electronic structure, linear, nonlinear optical...
Determination of the band-gap energy of Al[sub 1-x]In[sub x]N grown by metal-organic... Examines the growth process of ternary aluminum indium nitride (AlInN) by metal-organic chemical vapor deposition in the high Al composition regime. Measur... Kim,S K.,Saxler,... - 《Applied Phy...
The incorporation of In reduces the lattice mismatch in a much stronger way than the energy gap discontinuity. An In to Al ratio close to 1:5 should result in nearly strain-free heterostructures. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN ...
Direct observation of the semimetal to semiconductor transition in crossed band gap superlattices at magnetic fields of up to 150 T energy gapgallium compoundsIII-V semiconductorsindium antimonideindium compoundsinterface electron statesLandau levelsUltra-high magnetic field (> 150 T) cyclotron... DJ Bar...
Topological crystalline insulator nanomembrane with strain-tunable band gap The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we ... X Qian,F Liang,L Ju - 《纳米研究(英文版)》 被引量: 19发表...
energy gapgallium arsenideIII-V semiconductorsindium compoundsinternal stressesmagneto-optical effectsphotoluminescencesemiconductor quantum wells/ pressure dependenceWe report the measurement of the pressure dependence for the band-gap energy E g and conduction-band mass m c for an 80 Aring-wide n-type ...