A 4 Mb embedded phase change memory macro has been developed in a 90 nm 6-ML CMOS technology. The storage element has been integrated using 3 additional masks with respect to process baseline. The cell selector is implemented by a standard LV nMOS device, achieving a cell size of 0.29 $...
There are some research ongoing to decrease Read access time in Phase Change Memory. One of reference [7], discuss two ways to limit read latency. With respect to these techniques, we are concentrating on reducing the word-line charging time through row-decoding path. This point is more elab...
Further technical information: Phase-Change Memory (PCM), which is made using a Germanium Antimony Tellurium (GST) alloy, takes advantage of rapid heat-controlled changes in the material’s physical property between amorphous and crystalline states. These states, which correspond to logic 0 and 1,...
A novel p-trench phase-change memory (PCM) cell and its integration with a MOSFET selector in a standard 0.18 /spl mu/m CMOS technology are presented. The high-performance capabilities of PCM cells are experimentally investigated and their application in embedded systems is discussed. Write times...
Phase change memory (PCM) has been proposed to replace NOR flash and DRAM in embedded systems because of its attractive features. However, the endurance of PCM greatly limits its adoption in embedded systems. As most embedded systems are application-oriented, we can tackle the endurance problem ...
Phase change memory (PCM) has emerged as a promising non-volatile memory (NVM) technique for embedded systems. It has many attractive advantages, such as low energy (zero leakage power), fast read performance, bit addressability, shock-resistivity, high density and scalability [1], [2], [3...
Recently, phase change memory (PCM) has become a promising candidate to replace dynamic RAM as main memory due to its low power consumption, fast I/O performance, and byte addressability. Accompanied with the merits, the adoption of PCM may suffer from its physical characteristic of limited writ...
Embedded memory IP options include STT-MRAM, Phase-Change Memory (PCM), Resistive RAM (ReRAM) and Ferroelectric RAM (FRAM). Each emerging memory technology is different and suited for specific application(s) but STT-MRAM appears poised to go mainstream. STT-MRAM is a resistive memory technology...
Phase Change Memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics such as extremely low leakage power, high storage density and good scalability. However, PCM's low endurance constrains its practical applications. In this paper, we propose a wear ...
Phase change memory (PCM) is considered as a promising alternative of DRAM-based main memory in embedded systems. A PCM cell can be dynamically programmed to be in either multiple-level cell (MLC) mode or single-level cell (SLC) mode. With this morphable feature, we can utilize the high-...