Electron-beam lithography (EBL) is a method of etching semiconductors at resolutions smaller than a micrometer.[161] This technique is limited by high costs, slow performance, the need to operate the beam in the vacuum and the tendency of the electrons to scatter in solids. The last problem ...
Appropriate masking and electron-beam lithography techniques were used to open the window for the Si ion implementation to form the n+-GaN layer (with the resulting doping concentration of 4.0 × 1024 m−3). Around 40 nm of AlGaN/GaN has to be etched away via Cl2-based inductively ...