Considerable research has been conducted on e-beam lithography using evaporated PS in the last decade. Zhang et al.19evaporated PS on an AFM cantilever that was a few micrometers wide and nonplanar. The researchers first evaporated low-molecular-weight PS (1.2 kg/mol) on AFM probes. Subs...
电子束光刻系统EBL (E-Beam Lithography) 纳米光刻技术在微纳电子器件制作中起着关键作用,而电子束光刻在纳米光刻技术制作的方法。日本CRESTEC公司为21世纪纳米科技提供尖端的电子束纳米光刻(EBL)系统,或称电子束直写(EBD)、电子束爆光系统。 技术参数: 1.小线宽:小于10nm(8nm available) 2.加速电压:5-50kV 3...
PURPOSE:To eliminate the effect of distortion of the lens on a reduced projection device by a method wherein a reticle, which is deflectively positioned in such a manner that the deflection of an optical lens can be corrected in advance using an electronic beam drawing device based on the ...
9 Electron beam lithography (EBL) 1. Overview and resolution limit. 2. Electron source (thermionic and field emission). 3. Electron optics (electrostatic and magnetic lens). 4. Aberrations (spherical, chromatic, diffraction, astigmation). 5. EBL systems (raster/vector scan, round/shaped beam)...
请问什么是electron-beam lithography?
电子束光刻介绍Electronbeamlithography.ppt,Projection Mask-Less Patterning (PMLP) Programmable aperture plate system * MAPPER system For the video, see /technology.html At present, MAPPER system seems to be the most promising multi-beam direct write syste
ElectronBeamLithography电子束光刻——基本理论.PDF,Electron Beam Lithography 电子束光刻 ——基本理论 张志勇 zyzhang@pku.edu.cn 62755827 曝光技术分类 传统光学曝光技术 电子束曝光技术 离子束曝光技术 X射线曝光技术 极紫外曝光技术 纳米压
9Electronbeam-lithography3精品PPT课件 Electronbeamlithography(EBL)1.Overviewandresolutionlimit.2.Electronsource(thermionicandfieldemission).3.Electronoptics(electrostaticandmagneticlens).4.Aberrations(spherical,chromatic,diffraction,astigmation).5.EBLsystems(raster/vectorscan,round/shapedbeam)6.Interactionof...
Electron beam lithography (often abbreviated as e-beam lithography or EBL) is the process of transferring a pattern onto the surface of a substrate by first scanning a thin layer of organic film (called resist) on the surface by a tightly focused and precisely controlled electron beam (exposure...
In electron beam lithography apparatus a substrate, on which an exposure pattern is to be produced, is exposed to a plurality of electron beams. In a double beam arrangement one beam is capable of the highest resolution required and has a necessarily low writing speed. The other beam is relat...