A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected com...
A 16-Mb Flash EEPROM with a New Self-Data-Refresh Scheme for a Sector Erase Operation (Special Section on the 1993 VLSI Circuits Symposium (Joint ... - 《Ieice Transactions on Electronics》 被引量: 0发表: 1994年 A 3.3 V-only 16 Mb flash memory with row-decoding scheme A 3.3 V only...
S. Atsumi et al., "A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation," IEEE J. Solid-State Circuits, vol. 29, pp. 461-468, Apr. 1994.Shigeru Atsumi et al.; " A 16-Mb Flash EEPROM with a New Self-Data-Refresh Scheme for a Sector Erase ...
发明人: C Giovanni,ジョバンニカンパルド,M Rino,リノミケローニ 摘要: PROBLEM TO BE SOLVED: To provide a row decoder which can erase selectively one or plural rows of some sector of a memory array of a flash memory device.收藏...
When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling...
When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling...
When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling...
An Experimental 4-Mb Flash EEPROM with Sector Erase ", M. MCConnell et al., IEEE, vol. 26, No. 4, Apr. 1991, pp. 484-489.MCCONNELL ET AL: "An experimental 4-Mb flash EEPROM with sector erase" IEEE JOURNAL OF SOLID-STATE CIRCUITS., vol. 26, no. 4, April 1991, NEW YORK US,...
The memory cells of the Flash EEPROM are partitioned into a plurality of sectors that individually are erasable together as a unit. The individual sectors are provided with a user data portion and an overhead portion which allow for operations similar to that of a magnetic disk drive. In one...
A method for sector erasure and sector erase verification in a non-volatile FLASH EEPROMdoi:EP1265252Described herein is an erasure method for an electrically erasable nonvolatile memory device (1), in particular an EEPROM-FLASH nonvolatile memory device, comprising a memory array (3) formed by ...