Because the erase gate is formed concurrently with the control gate, the process used to form the EEPROM requires only two layers of polysilicon. Also, because electrons tunnel between the floating gate and the erase gate during electrical erase instead of between the floating gate and the drain...
Greetings Dear Experts, I'm trying to debug MM9Z1J638 MCU with a selfmade programmer, i looked in Datasheet and succesfully read Device ID EEprom and PFlash but when i try to ERASE eeprom it do nothing I'm using comands 0x12 (cmd) 0x10 (adr High) 0x0000 (adr Med+Low)...
Greetings Dear Experts, I'm trying to debug MM9Z1J638 MCU with a selfmade programmer, i looked in Datasheet and succesfully read Device ID EEprom and PFlash but when i try to ERASE eeprom it do nothing I'm using comands 0x12 (cmd) 0x10 (adr High) 0x0000 (adr Med+Low) also i ...
(d)指明 erase_eeprom_all acopyofthatorder EEPROM” ” ”指A16 prejudice” ”横向 ”” 9 位 ” 而代以“或 指明 ” 而代以“或”( member ® 匿名 2013-05-23 12:24:58 正在翻译,请等待... 匿名 2013-05...
JESD22-A117C ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM) PROGRAM ERASE ENDURANCE AND DATA RETENTION TEST 下载积分: 100 内容提示: JEDEC STANDARD Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Stress Test JESD22-A117C (Revision of JESD22-A117B, March ...
Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This conce... J Van Houdt,L Haspeslagh,L Deferm,... 被引量: 0发表: 2006年 A 5 V-only 0.6 mu m flash EEPROM with row decoder scheme...
ELECTRI CALLY ERASABLE PROGRAMMABLE ROM (EEPROM) PROGRAM/ERASE ENDURANCE AND DATA RETENTI ON STRESS TEST (From JEDEC Board Ballot JCB-11-73, formulated under the cognizance of the JC-14.1 Subcommittee on Reliability Test Method and Packaged Devices.) 1 Scope This stress test is intended ...
Greetings Dear Experts, I'm trying to debug MM9Z1J638 MCU with a selfmade programmer, i looked in Datasheet and succesfully read Device ID EEprom and PFlash but when i try to ERASE eeprom it do nothing I'm using comands 0x12 (cmd) 0x10 (adr High) 0x0000 (adr Med+Low) also i ...
An erase and program control system has been implemented in a 60-ns 16-Mb flash EEPROM. The memory array is divided into 64 blocks, in each block, erase pu... T Nakayama,S.-I. Kobayashi,Y Miyawaki,... - IEEE Journal of Solid-State Circuits 被引量: 116发表: 1991年 EEPROM decoder ...
United States Patent US5656840 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text