Flash memory指的是“闪存”,所谓“闪存”,它也是一种非易失性的内存,属于EEPROM的改进产品。它的最大特点是必须按块(Block)擦除(每个区块的大小不定,不同厂家的产品有不同的规格),而EEPROM则可以一次只擦除一个字节(Byte)。目前“闪存”被广泛用在PC机的主板上,用来保存BIOS程序,便于进行程序的升级。其另外...
erase_count[block_num]++; // 判断是否需要进行均衡操作 if(erase_count[block_num] >= EEPROM_BLOCK_NUM) { // 寻找擦写次数最小的块 uint16_t min_erase_count_block = 0; uint32_t min_erase_count = UINT32_MAX; for(int i=0; i<EEPROM_BLOCK_NUM; i++) { if(erase_count[i] < min_...
A block-erase operation is performed such that a desired one of the memory blocks is selected for erase, while forcing the remaining memory blocks to remain non-erased. To do this, a first voltage is applied to those of the word lines of the selected block, while applying a second ...
HUAWEI TECHNOLOGIES Co., Ltd.HUAWEI Confidential I2C接口接口EEPROM写操作写操作页写操作(Page Write):以24LC08为例,它的存储结构为:4(block)2568(bit) ,Page Write Buffer大小为16bytes。那么Page Write时,在Control Byte指定Block选择位“B1B0”,在Word Address指定8位地址“A7A6A5 11、A4A3A2A1A0”。那样...
• Self-Timed Erase and Write Cycles (5 ms max.) • Block Write Protection: - Protect none, 1/4, 1/2 or all of array • Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin ...
• Self-Timed Erase and Write Cycles (5 ms max.) • Block Write Protection: - Protect none, 1/4, 1/2 or all of array • Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin ...
• Self-Timed Erase and Write Cycles (5 ms max.) • Block Write Protection: - Protect none, 1/4, 1/2 or all of array • Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin ...
//注:STC8H系列有比较大的EEPROM。可以分4个扇区2K存数据。 #define EEPROM_ADDR_BASE 0U #define EEPROM_ADDR_GLOBAL (EEPROM_ADDR_BASE + 1U) #define EEPROM_ADDR_PARAMETERS (EEPROM_ADDR_BASE + 512U) #define EEPROM_ADDR_STARTUP_BLOCK (EEPROM_ADDR_BASE + 1024U) ...
//注:STC8H系列有比较大的EEPROM。可以分4个扇区2K存数据。 #define EEPROM_ADDR_BASE 0U #define EEPROM_ADDR_GLOBAL (EEPROM_ADDR_BASE + 1U) #define EEPROM_ADDR_PARAMETERS (EEPROM_ADDR_BASE + 512U) #define EEPROM_ADDR_STARTUP_BLOCK (EEPROM_ADDR_BASE + 1024U) ...
Flash memory is a special form of EEPROM. Identical in structure to EEPROM, flash memory chips use normal PC voltages for erasure and reprogramming. Also, an entire block of bytes must first be erased. Flash memory uses a single regular MOS transistor to erase an entire block of FGTs. Most...