Since the condition of a local power matching circuit to an intermediate frequency component when the dual gate FET mixer offers the highest performance is generally that the 2nd gate terminal G2 is short-circuited, the local power matching circuit of this mixer is optimized to two frequency ...
Accordingly, new MOSFET structures, such as the dual-gate (FinFET) and the tri-Gate transistor, have been proposed to replace the conventional planar MOSFET. These devices are compatible with conventional silicon integrated circuit processing, but offer superior performance as the device is scaled ...
dual gate fet 美 英 un.双栅场效应晶体管 英汉 un. 1. 双栅场效应晶体管
发明人: HANSON; JOHN W.,MACDOUGALL; JOHN D. 被引量: 54 摘要: A dual gate FET is described wherein the second channel is made more conductive than the first such that when employed as an amplifier or a mixer circuit, zero bias is required from the gates to ground.收藏...
DUAL-GATE FET WITH CAPACITY CORRECTION CIRCUIT 优质文献 相似文献A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes For 90 nm node poly-Si gated MISFETs with HfSiO (1.8 nm) insulator, a nearly symmetrical set of Vths for NFET and PFET: (0.38...
(a) Device structure-1 of dielectric-modulated, dual-gate, TMD FET (DM-DG-TMD-FET)-based Biosensor, and (b) Device structure-2 of DM-DG-TMD-FET-based biosensor. Full size image An equivalent capacitance model of the device structure-1 and 2 has also been drawn in Fig.2. Here,xis...
12-GHz-band GaAs MMIC mixer using a dual-gate FET with reduced output impedance A 12-GHz-band GaAs monolithic dual-gate FET mixer using a novel circuit configuration has been demonstrated. Adoption of a negative feedback circuit has re... K Kanazawa,M Hagio,M Kazumura,... - 《Institute...
FULLY-DEPLETED, FULLY-INVERTED, SHORT-LENGTH AND VERTICAL CHANNEL, DUAL-GATE, CMOS FET 来自 百度文库 喜欢 0 阅读量: 14 申请(专利)号: JP特願2000-307442(P2000-307442) 申请日期: 20001006 公开/公告号: JP特開2001-189453(P2001-189453A)A 公开/公告日期: 20010710 申请(专利权)人: LSI ...
DUAL GATE-TYPE INSULATED GATE FET 优质文献 相似文献A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure...
Dual-gate FET phase shifter A broadband dual-gate FET phase shifter operating over the 4-8 GHz frequency band is described. The device is capable of continuous phase shift and a large... Mahesh Kumar - RCA Review, vol. 42, Dec. 1981, p. 596-616. 被引量: 8发表: 1981年 A microwave...