dual gate fet 美 英 un.双栅场效应晶体管 英汉 un. 1. 双栅场效应晶体管
Dual gate是指具有两个门的场效应晶体管(FET),主要有以下作用和优点: 1.增强增益:由于具有两个门,可以控制电流的流动。因此,可以在输入和输出之间引入附加的增益级,从而提高放大器的增益。 2.高灵敏度:由于可以控制两个门,可以调节电压的增益特性,使得放大器可以更好地抵御噪音和干扰。 3.更高的输入阻抗:与单...
Dual Gate技术原理 1. Dual Gate 技术是一种针对场效应晶体管(FET)的设计和制造技术。通过在晶体管中添加第二个栅极,可以实现更高的增益、更低的噪声和更大的频带等优化。 2. Dual Gate Dual Gate 技术的原理基于多栅极对电流和电压进行控制的思想。在传统的晶体管中,只有一个栅极用于控制电流。而在 Dual Gat...
PURPOSE:To improve power gain, noise figure and cross modulation characteristic by so setting the ratio of a first resistance to a second resistance that the voltage of a connecting point for applying a fixed bias becomes equal to the threshold voltage of a second gate. CONSTITUTION:A first ...
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发明人: HANSON; JOHN W.,MACDOUGALL; JOHN D. 被引量: 54 摘要: A dual gate FET is described wherein the second channel is made more conductive than the first such that when employed as an amplifier or a mixer circuit, zero bias is required from the gates to ground.收藏...
Accordingly, new MOSFET structures, such as the dual-gate (FinFET) and the tri-Gate transistor, have been proposed to replace the conventional planar MOSFET. These devices are compatible with conventional silicon integrated circuit processing, but offer superior performance as the device is scaled ...
网络双栅场效应管 网络释义 1. 双栅场效应管 【摘要】:利用双栅场效应管(Dual-Gate GaAs FET)的特性,对功率放大器进行预失真,以提高功率放大器的幅度、相位线性度, … cpfd.cnki.com.cn|基于 1 个网页
The most efficient way of improving the high-frequency performance of a field-effect transistor (FETs) is to reduce the gate length. However, as the gate l... KL Nummila - 《Dissertations & Theses》 被引量: 0发表: 1993年 Dual material gate field effect transistor (DMG-FET). Improving ...
In this work, a new dual-gate DLTFET based on line tunneling (LT) is designed and studied by Sentaurus TCAD simulation tool. The on-state current and subthreshold swing (SS) of DLTFET are greatly improved by skillfully designing back gate engineering and bias. Applying this novel design, ...