drastic leakage current reductiongate separation etching processindependent-gate four-terminal FinFET SRAMmetal gateAccelerationThe decreased feature size of metal-oxide-semiconductor (MOS) devices in ultra-large-scale-integrated circuits (ULSIs) requires the nano-scale complementary MOS (CMOS) fabrication ...
The speed performance of a double-gate (DG) FinFET CMOS with gate-source/drain (G-S/D) underlap is investigated using 2-D device and mixed-mode circuit simulation. By optimizing the G-S/D underlap, we demonstrate that the fin thickness of a DG FinFET can be significantly increased up ...
Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction of the 4T-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM cell. K Endo,SI O'Uchi,Y Ishikawa,... - IEEE International Conference on Integrated Circuit...
A framework for modeling of quantum mechanical effects in the ultra-thin body Nanoscale double-gate (DG) FinFET is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electr
FinFET a self-aligned double-gate MOSFET scalable to 20 nm… 热度: [2010][Nature]High-speed graphene transistors with a self-aligned nanowire gate 热度: 相关推荐 2320IEEETRANSACTIONSONELECTRONDEVICES,VOL.47,NO.12,DECEMBER2000 FinFET—ASelf-AlignedDouble-GateMOSFET Scalableto20nm DighHisamoto...
Method for manufacturing double gate finFET with asymmetric halo 来自 百度文库 喜欢 0 阅读量: 19 申请(专利)号: US20060427409 申请日期: 2006-06-29 公开/公告号: US8227316B2 公开/公告日期: 2012-07-24 申请(专利权)人: HUILONG ZHU;OLEG GLUSCHENKOV;JING WANG 发明人:...
This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives ...
The third layout, like the FinFET, has a silicon ridge of a few tenths of nanometers in thickness, which is the active area of the transistor. In this layout, the current flow is perpendicular to the surface of the wafer. FIG. 1 illustrates a conventional double gate device 1 having ...
重点介绍器件进入纳米尺度后出现的MOSFET/SOI器件的新结构,如超薄SOI器件、双栅MOSFET、FinFET和应变沟道等SOI器件,并对它们的性能进行了分析。 2. A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson s equation to obtain the relationship betwe en the surf...
To maintain the Moore law trend, new device structures The cross-section of the device described in this letter have been proposed in literature, such as vertical-channelnd double-gate SOI MOSFETs, including the FinFET, theFXMOS and the D-channel SOI MOSFET[4], [5].Althoughhese novel struc...