Drain current, transconductance, series resistance effects, subthreshold slope and carrier concentration profiles are simulated for different architectures, based on a 50nm long SOI MOSFET. We compare single gate, ideal aligned DG, and non-aligned DG transistors in which unequal gate lengths are used...
er Using Independent Gate Control in Sub-50-nm Double-Gate MOSFET Saibal Mukhopadhyay, Student Member, IEEE, Hamid Mahmoodi, Member, IEEE, and Kaushik Roy, Fellow, IEEE Abstract—Double-gate (DG) transistor has emerged as one of the most promising devices for nano-scale circuit design. In ...
Double gate dual metal dopant free re-configurable mosfet Pogaku, Raghavendra Abhishek Yadav. Texas A&M University - Kingsville ProQuest Dissertations & Theses, 2015. 1589837. ProQuest, part of Clarivate 关于ProQuest 联系我们 条款与条件 隐私政策 Cookie 隐私 管理cookie 首选项 工作人...
Design of Double Gate MOSFET and FDSOI using high k material for nano scaled Circuits The rapid technology developments in the metal-oxide-semiconductor industry have lead to CMOS scaling down to the sub-20nm regime, and according to the 200... SS Chopade,DV Padole - IEEE 被引量: 2发表...
Double gate depletion mode MOSFET 优质文献 相似文献 参考文献 引证文献Ultimately thin double-gate SOI MOSFETs The operation of 1-3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mode (for either front or back channel), is systematically analyze... T Ernst,S Cristolove...
FinFET a self-aligned double-gate MOSFET scalable to 20 nm… 热度: [2010][Nature]High-speed graphene transistors with a self-aligned nanowire gate 热度: 相关推荐 2320IEEETRANSACTIONSONELECTRONDEVICES,VOL.47,NO.12,DECEMBER2000 FinFET—ASelf-AlignedDouble-GateMOSFET Scalableto20nm DighHisamoto...
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Junctionless dual material double gate stack metal oxide semiconductor field effect transistor(JL DMDG Stack MOSFET)Poisson equationThe 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing, Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double...
A double gate MOSFET. The MOSFET includes a bottom gate electrode and a bottom gate dielectric disposed over the bottom gate electrode. A semiconductor body region is disposed over the bottom gate dielectric and the bottom gate electrode, and disposed between a source and a drain. A top gate ...
摘要: MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0.4Ge0.6 as a gate material, the desired threshold v......