Drain current, transconductance, series resistance effects, subthreshold slope and carrier concentration profiles are simulated for different architectures, based on a 50nm long SOI MOSFET. We compare single gate, ideal aligned DG, and non-aligned DG transistors in which unequal gate lengths are used...
浏览ProQuest 或者,您可以通过以下选项直接从 ProQuest 购买本文档完整全文文献的副本: 订购 Double gate dual metal dopant free re-configurable mosfet Pogaku, Raghavendra Abhishek Yadav. Texas A&M University - Kingsville ProQuest Dissertations & Theses, 2015. 1589837. 返回...
摘要: Proposed is a new style of reconfigurable cell using the double-gate MOSFET based on an independent gate control combined with an asymmetric structure. A dynamically reconfigurable 4-function logic cell is used to benchmark the proposal....
FinFET-a quasi-planar double-gate MOSFET The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no... SH Tang,L Chang,N Lindert,... - IEEE International Solid-state Circuits Conference 被引量: ...
FinFET a self-aligned double-gate MOSFET scalable to 20 nm… 热度: [2010][Nature]High-speed graphene transistors with a self-aligned nanowire gate 热度: 相关推荐 2320IEEETRANSACTIONSONELECTRONDEVICES,VOL.47,NO.12,DECEMBER2000 FinFET—ASelf-AlignedDouble-GateMOSFET Scalableto20nm DighHisamoto...
This paper presents a new β-Ga2O3 Junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide layer (PO-βDG-JL-FET) for high-frequency applications. Our goal is to achieve an efficient volume depletion region by placing...
A double gate MOSFET transistor and a method for fabricating it are described. In this case, a semiconductor layer structure of a transistor channel to be formed is embedded in a spacer material and contact-connected by source and drain regions which are filled into depressions that are etched ...
. The design we present here, a double-gate (DG) device with a high-κ gate dielectric, is a way of achieving similar improvements (with an ON-current of 0.23 mA, lower than the ITRS requirement, but an OFF-current sig- ni cantly reduced compared to a conventional MOSFET), whil...
We perform the benchmarking study with quasi-2D simulation on a model 10 nm ultra-thin body double-gate MOSFET. We confirm from our results that none... JH Rhew,Z Ren,MS Lundstrom - 《Journal of Computational Electronics》 被引量...
Junctionless dual material double gate stack metal oxide semiconductor field effect transistor(JL DMDG Stack MOSFET)Poisson equationThe 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing, Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double...