To take advantage of the double gate MOSFET (DGMOS) architecture with independent driven gates, designers need compact models to imagine new circuits. A model is a description of the device electrical behavior. Thus, the electrostatics part is put in equation, equation's Poisson with Boltzmann ...
circuit codesignDGMOSFETpower circuit designsymmetric/asymmetric gate oxide thickness/ B2560R Insulated gate field effect transistors B6250Z Other radio linksRecently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold...
The Double Gate silicon (DG) MOSFET with extremely short-channel length has the appropriate features to constitute the devices for nanoscale circuit design. To develop a physical model for extremely scaled DG MOSFETs, the drain current in the channel must be accurately determined under the applicatio...
er Using Independent Gate Control in Sub-50-nm Double-Gate MOSFET Saibal Mukhopadhyay, Student Member, IEEE, Hamid Mahmoodi, Member, IEEE, and Kaushik Roy, Fellow, IEEE Abstract—Double-gate (DG) transistor has emerged as one of the most promising devices for nano-scale circuit design. In ...
Double gate (DG)-SOI ratioed logic with symmetric DG load - A novel approach for sub 50 nm low-voltage/low-power circuit design double Gate SOI MOSFETlow voltage/low power circuit designIn this paper we introduce a novel logic gate family based on Double Gate (DG) SOI MOSFETs ... S ...
Device structure and parameter design The novel structure of the MOSFET with double-trench gate is shown in Fig. 7. Compared with the traditional VDMOS structure, the gate structure is different. In the traditional VDMOS, the JFET resistance and the accumulated layer resistance account for 38% of...
Design of Double Gate MOSFET and FDSOI using high k material for nano scaled Circuits The rapid technology developments in the metal-oxide-semiconductor industry have lead to CMOS scaling down to the sub-20nm regime, and according to the 200... SS Chopade,DV Padole - IEEE 被引量: 2发表...
Y. Taur, An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Device Lett. 21, 245–247 (2000) Article ADS Google Scholar N.N. Mojumder, K. Roy, Band-to-band tunneling ballistic nanowire FET: Circuit-compatible device modeling and design of ultra-low-power ...
In this paper, we have explored the circuit techniques for a DP4T RF CMOS switch, which is an application of the independent double-gate MOSFET with symmetrical gate at 45-nm technology design and analyzed the better drain current, output voltage, ON resistance, ON/OFF ratio and insertion ...
The optimum biasing points and structural design parameters for novel nano-scale double gate MOSFET (DG-MOSFET) radio frequency mixers are investigated at ... S Laha,S Kaya - 《Analog Integrated Circuits & Signal Processing》 被引量: 3发表: 2013年 Design, simulation, and fabrication of nano-...