The dielectric constant of tetraethylorthosilicate (TEOS)/O3 chemical vapor deposited silicon dioxide ( TEOS/O3-NSG) ranges, within the extent of this work, from 4 to 6, depending on both the deposition conditions and the substrate material. Although their influences on the dielectric constant are...
PROBLEM TO BE SOLVED: To reduce the specific dielectric constant of a silicon oxide insulating film and to prevent contamination due to additional gas and the deterioration of a hot carrier resistance from being generated in a semiconductor device by a method wherein the fluorine-containing silicon...
Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide infrared spectra of inorganic solidsintegrated circuit technologymetallisationpermittivityplasma CVD coatingsrefractive indexscanning electron microscope examination of ... T Usami,K Shimokawa,M Yoshimaru - 《Japanese Journal of Applied Physic...
Measurements of the dielectric constant of thin oxides have concluded that the band gap of thermally grown oxides thicker than 2.3 nm is 8.95 eV, regardless of the thickness [18]. Furthermore, some researchers have concluded that the stress in the oxide next to the interface is relieved after...
High dielectric constant gate oxides for metal oxide Si transistors The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (1.4nm) t... J Robertson - 《Reports on Progress in Physics》...
L. Dielectric breakdown in HfO2 dielectrics: using multiscale modeling to identify the critical physical processes involved in oxide degradation. J. Appl. Phys. 131, 234501 (2022). Article CAS Google Scholar Helms, C. R. & Poindexter The silicon-silicon dioxide system: its microstructure and ...
and an increase in the system complexity of microelectronic components (such as a metal-oxide-semiconductor field-effect transistor) for further extending Moore's law and scaling up components/devices, a real need in the electronics industry is to use high dielectric constant materials (high-k diel...
At first, a P- type silicon substrate is prepared, on which are formed a field oxide layer, a P-well, an N-well... CN Yang - US 被引量: 15发表: 1998年 Microstructure developments of F-doped SiO2 thin films prepared by liquid phase deposition Low dielectric constantFluorineDoped silicon...
High dielectric constant oxides 来自 Semantic Scholar 喜欢 0 阅读量: 222 作者: Robertson, J.摘要: The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too...
Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method The hole trapping characteristics of memory capacitors with blocking oxide-silicon carbonitride (SiCN)-tunnel oxide and blocking oxide-silicon nitride-tunn.....