The Raman spectra of monolayer MoSe2is given in Fig.1d. Two main peaks associated with theA1g(out of plane) andE12g(in-plane) vibrational modes are observed at 239.2 cm−1and 285.4 cm−1, respectively. The distance between the peaks, 46.2 cm−1, provided additional confir...
An analytic expression of the dielectric function of monolayer molybdenum disulfide (MoS2) epsilon = epsilon(1) + i epsilon(2) is presented for energies from 1.4 to 6.0 eV and temperatures from 35 to 350 K. The dielectric function parametric model is used to express epsilon as a sum of ...
Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed. Atomically thin two-dimensional (2D)...
Measurement of the optical dielectric function of monolayer transition- metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2. Phys. Rev. B 90, 205422 (2014).Li, Y. et al., Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe...
The stacking of heterobilayer strongly influences its mechanical properties. • Static dielectric constant also shows tunability on heterostructuring as well as with applied train and electric field. Abstract The electronic, mechanical anddielectric propertiesof lateral MoS2/SiC heterobilayer are investigate...
(3D) structures at a temperature as low as 300 °C, hundreds of degrees lower than that previously reported for 2D-BN growth. The thickness is precisely controlled from monolayer to four-layer by the growth time. After modification, the substrates have a smooth, atomically clean, and ...
The electron affinity and bandgap of the TMDCs used in different layers effectively control the threshold voltage and current in the device. As seen from our simulation, interlayer materials with high dielectric constant can degrade subthreshold device performance, increase threshold voltage, whereas ...
An analytic expression of the dielectric function of monolayer molybdenum disulfide (MoS2) epsilon = epsilon(1) + i epsilon(2) is presented for energies from 1.4 to 6.0 eV and temperatures from 35 to 350 K. The dielectric function parametric model is used to express epsilon as a sum of ...
degradation in chemically synthesized monolayer MoS2 field effect 41. Yang, R., Mobility. Wang, Z. Nanoscale & 6, Feng, P. X. Electrical 12383–12390 (2014). Breakdown of Multilayer MoS2 Field-Effect Transistors with Thickness-Dependent 42. 43. Chen, M. Egginger, eMt a.,lB. Satuaebrl...
Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface ...