An analytic expression of the dielectric function of monolayer molybdenum disulfide (MoS2) epsilon = epsilon(1) + i epsilon(2) is presented for energies from 1.4 to 6.0 eV and temperatures from 35 to 350 K. The dielectric function parametric model is used to express epsilon as a sum of ...
The spin splitting of monolayer MoSe2 at the valence band maximum is larger than that of monolayer MoS2, making MoSe2 potentially useful for spintronic devices3. The applications mentioned above are closely related to the dielectric properties of these materials. Spectroscopic ellipsometry (SE) is a...
Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed. Atomically thin two-dimensional (2D)...
measurement of the optical dielectric function of monolayer transition-metal dichalcogenides This chapter presents the complex in-plane dielectric function from 1.5 to 3 eV for monolayers of four transition metal dichalcogenides: MoSe2, WSe2, MoS2,... Mos,Mose,Wse,... 被引量: 0发表: 2019年 Tra...
Measurement of the optical dielectric function of monolayer transition- metal dichalcogenides: MoS2, MoSe2, WS2, andWSe2 Phys. Rev. B 90, 205422 (2014).Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Ch- ...
investigate the mechanical stability under applied biaxial tensile strain, in-plane stiffness, effect of cracks on the ideal tensile strength, electronic band gap and static dielectric constant tunability via in-plane biaxial tensile/compression strain and gated electric field in MoS2/SiC hybrid ...
While for the dielectric screening effect, normally higher dielectric constant corresponds to a larger red shift [45,46]. Scheuschner et al. have measured the X- trion in a free-standing monolayer MoS2 as well as that on an SiO2substrate, and the red shift is about 25 meV [20]. Show ...
We develop a statistical mechanical theory of the dielectric properties of the Stern inner region at the mercury-water interface in the absence of specific adsorption of ions. The model of the region is a plane monolayer of polarizable w... S Levine,GM Bell,AL Smith - 《Journal of Physical...
et al. Effect of the degree of the gate-dielectric surface roughness on the performance of bottom-gate organic thin-film transistors. Adv. Mater. Interfaces 7, 1902145 (2020). Article Google Scholar Cui, X. et al. Low-temperature ohmic contact to monolayer MoS2 by van der Waals bonded ...
degradation in chemically synthesized monolayer MoS2 field effect 41. Yang, R., Mobility. Wang, Z. Nanoscale & 6, Feng, P. X. Electrical 12383–12390 (2014). Breakdown of Multilayer MoS2 Field-Effect Transistors with Thickness-Dependent 42. 43. Chen, M. Egginger, eMt a.,lB. Satuaebrl...