An analytic expression of the dielectric function of monolayer molybdenum disulfide (MoS2) epsilon = epsilon(1) + i epsilon(2) is presented for energies from 1.4 to 6.0 eV and temperatures from 35 to 350 K. The dielectric function parametric model is used to express epsilon as a sum of ...
The dielectric function[Math Processing Error]of monolayer molybdenum diselenide (MoSe2) is obtained and analyzed at temperatures from 31 to 300 K and at energies from 0.74 to 6.42 eV. The sample is a large-area, partially discontinuous monolayer (submonolayer) film of MoSe2grown on a s...
Specifically, monolayer MoS2bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed. 展开 ...
& Cho, K. Monolayer mos2 bandgap modulation by dielectric environments and tunable bandgap transistors. Scientific Reports 6, 29184, doi:10.1038/srep29184 (2016).J. Ryou, Y.-S. Kim, S. Kc and K. Cho, Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors,...
We report a determination of the complex in-plane dielectric function of monolayers of four transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, for photon energies from 1.5 to 3 eV. The results were obtained from reflection spectra using a Kramers-Kronig constrained variational analysis...
F. Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2. Phys. Rev. B 2014, 90, 205422.Li, Y., et al., Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, ...
Electrically-Driven Tuning of the Dielectric Constant in MoS2 Layers. The properties of two-dimensional materials, such as molybdenum disulfide, will play an important role in the design of the next generation of electronic d... EJG Santos,E Kaxiras - 《Acs Nano》 被引量: 96发表: 2013年 ...
investigate the mechanical stability under applied biaxial tensile strain, in-plane stiffness, effect of cracks on the ideal tensile strength, electronic band gap and static dielectric constant tunability via in-plane biaxial tensile/compression strain and gated electric field in MoS2/SiC hybrid ...
Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed. Atomically thin two-dimensional (2D)...
et al. Effect of the degree of the gate-dielectric surface roughness on the performance of bottom-gate organic thin-film transistors. Adv. Mater. Interfaces 7, 1902145 (2020). Article Google Scholar Cui, X. et al. Low-temperature ohmic contact to monolayer MoS2 by van der Waals bonded ...