Enhanced dielectric constant was brought to PEI by the MoS2 fillers. The PEI containing 20 phr of MoS2 showed a dielectric constant of 6.1 at 1kHz with dielectric loss still being low. This work revealed the potential of MoS2 being adopted as filler of field grading composites....
(i) Al incorporation into ZrO2 can decrease its oxygen vacancies; densify the dielectric film; and smooth the gate dielectric surface, thus reducing the traps at/near the Zr0.5Al0.5O y /MoS2 interface and the gate leakage current; (ii) adjusting the dielectric constant of the gate dielectric...
The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental materia...
All structures blue-shift and sharpen with decreasing temperature as a result of the reducing lattice constant and electron-phonon interactions. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose-Einstein statistical...
investigate the mechanical stability under applied biaxial tensile strain, in-plane stiffness, effect of cracks on the ideal tensile strength, electronic band gap and static dielectric constant tunability via in-plane biaxial tensile/compression strain and gated electric field in MoS2/SiC hybrid ...
(a) Calculated GW bandgaps at the K valley of the ML eκMfEfoeoScft2tiovhene function a substrate (red) and in a sandwich structure (black), as a function of the effective dielectric constant delenievvleeilrcsotonrifmcAmeune(td.at(iab−)h5Ca.v1ai lencVgu)lκaaEtn....
Image charge effect in layered materials: Implications for the interlayer coupling in MoS2 The electronic and optical properties of layered materials, such as transition metal dichalcogenides, can be strongly affected by their dielectric environm... P Marauhn,M Rohlfing - 《Physical Review B Covering...
In addition, each layer of BPB or PBP trilayer films is composed of the nanocomposite, where the outer layer is filled with BNNS fillers that can reduce leakage current and improve insulation, while the highly polarizable fillers of BaSrTiO3 NWs or MoS2 nanosheets are filled into polymer as th...
Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high-quality interface is challenging with such materials, because the atomic thickness of MoS2 makes it sensitive to defect...
In contrast to the layered hBN, AlN is a bulk material with a larger bandgap of 6.3 eV and higher dielectric constant of 9.1427,31, and can be deposited uniformly on large samples by PEALD32 or thermal ALD33. Moreover, our recent result has shown that by using AaclhNieavnindgAal2...