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It is designed to drive IGBTs and SiC MOSFETs up to 5 MHz with a best-in-class propagation delay and pulse-width distortion. The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (...
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特征描述 Soft switching for all MOSFETs. Soft start to limit inrush current Ultra fast short circuit protection Operation at resonant frequency List of components: ISC031N08NM6 IQE006NE2LM5 2EDL8034-G3C 2DIB0401F XDPP1100-Q024 优势
In SiC-based MOSFETs, it was commonly assumed that the BJT turn-on mechanism would be responsible for SEB. This became the conventional way of thinking, which may have led to confirmation bias when investigating the device. Zhang [23] was one of the first to investigate SiC MOSFET SEB failu...
For the comparison of converters with SiC-MOSFETs and Si-IGBTs, a (690 V, 190 kVA) two-level voltage source converter (2L-VSC) as active front end (AFE) of an electrical drive (Figure 1 and Table 1) was selected, as the 2L-VSC is the dominating converter topology in low voltage ...
This article presents the results of the investigations concerning the influence of the printed circuit board (PCB) layout design on self and transfer transient thermal impedances characterizing thermal phenomena occurring in the network containing two power MOSFETs. The tested devices have the case D2...
The DC/AC converter has been implemented with four Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) following a full-bridge topology. These transistors are particularly suitable for this application as they support the required switching frequency and the current values...
Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules. In Proceedings of the 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, USA, 2–4 November 2015; IEEE: New York, NY, ...
Reliability-related aspects of some rules, like space, width, and via density, are also discussed with additional design-for-manufacturing layout recommendations. Keywords: back end of line; layout design rules; copper technology; inter-metal dielectric time-dependent dielectric breakdown (IMD-TDDB) ...