It has always been stated in electronics, semiconductor and solid state device textbooks that the hole drift and electron drift currents in the depletion region of a p–n junction are constant and independent of applied voltage (biasing). However, the explanations given are qualitative and unclear...
We directly image an InPp–njunction depletion region under both forward and reverse bias using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique. The SVM results are compared to those obtained with scanning spreading resistance microscopy (SSRM) measurements under zero ...
(redirected fromDepletion zone) depletion region [də′plē·shən ‚rē·jən] (electronics) The portion of the channel in a metal oxide field-effect transistor in which there are no charge carriers. McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by ...
SBs, on the other hand, are majority carrier devices, so that minority carrier traps can in principle only be detected by the creation of minority carriers through an optical pulse—an example is given in Fig. 7 for the case of an irradiated Sn-doped n-type float-zone (FZ) silicon ...
aThe diode is a device made from a single p-n junction. At the junction of a p-type and an n-type semiconductor there forms a region called the depletion zone which blocks current conduction from the n-type region to the p-type region, but allows current to conduct from the p-type ...
[48] also stated that the thickness of the concentration boundary layer, which indicates the depletion zone of the reactant, increases when the volumetric flow rate is reduced. The fuel cell should operate at higher flow rates to suppress the development of a thick concentration boundary layer. ...
cm p-type 〈100〉 uncompensated float-zone silicon substrates for soft X-ray (1-10 keV), and near-infrared (0.75-1 µm) sensing. The large depletion layer width (>50 µm) resulting from the high substrate resistivity minimizes minority-carrier generation in the neutral bulk region ...
Positive gate-to-source voltages “enhance” the number of free carriers in the channel compared to Vgs = 0 V. The Vgs > 0 V zone on the drain characteristic and transfer curve is denoted enhancement region, and between cutoff and Idss, depletion region. ...
In contrast, the gonads of heterozygous worms (ifg-1 À/ þ ; lower right panel) contained many hundreds of germ cell nuclei in all stages of meiosis including the crescent shape characteristic of transition zone (tr) as well as mature sperm (sp) in the spermatheca. For each genotype...
(Supplementary Figure3E–G; Fig.3i–k). In the MWM probe trial, PLX5622-treated wild-type mice tended to spend more time in the platform zone compared to wild-type mice (Fig.3k), indicating that the long-term absence of microglia is not detrimental to murine cognitive function and may ...