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DIRECT MEASUREMENT OF THE DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P‐N JUNCTION 来自 Semantic Scholar 喜欢 0 阅读量: 29 作者:NC Macdonald,TE Everhart 摘要: Scitation is the online home of leading journals and conference proceedings from AIP Publishing and AIP Member Societies...
In the depletion layer which is generated during PN junctionPROBLEM TO BE SOLVED: To solve the problem that, in the conventional semiconductor image sensor IC, a small number of carriers is generated in an unintended surface part of a wafer due to slight moisture existing in the atmosphere and...
P-N Junction Formation||Junction Voltage and depletion Layer||Biasing OF a P-N junction||Forward and Reverse Biasing||V-I Characterstic OF a P-N Junction||Res
If P-N junction is reverse biased then width of depletion layer :- 01:12 Fermi level of n-type semi-conductor lies in:- 02:26 What is the energy gap in Si semiconductor? 02:10 When P is dopped with Si, the resultant semi-conductor will be :- 01:58 A p-n photodiode is made ...
Semiconductor processing method of reducing thickness depletion of a silicide layer at a junction of different underlying layersUS6054396 1997年6月3日 2000年4月25日 Micron Technology, Inc. Semiconductor processing method of reducing thickness depletion of a silicide layer at a junction of different ...
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PN-JUNCTION DEPLETION LAYER TUNNEL TRANSISTORThe present invention relates to a transistor for controlling breakdown phenomenon occurring in a Zener pn junction diode to a third terminal. A tunneling transistor consists of a semiconductor inlet layer doped with a high concentration of electrons, a ...
Closed form solutions of the potential differencebetween the two depletion layer edges are obtained by integrating Poisson's equation and equating the positive and negative charges in the depletion layer. Using the integrability of complementary error functionsthe depletion layer thicknessjunction built-in...
We have calculated the avalanche breakdown voltage and the extent of the depletion region for a pn-junction with a double error function doping profile which could be useful in the design of high voltage thyristors. The results are presented as a set of curves corresponding to various surface ...