For realizing the Si delta-doping, an abrupt GaAs growth interruption technique which we have newly found was applied. The free carrier concentration was measured by the C-V method. The delta-doped layer has a maximum carrier concentration of 2.2 x 10 cm and a full width at half-maximum ...
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG) layer developed in a delta-doped heterostructure. The ...
The delta-doped transistor structure comprises a buffer layer 2 made of GaAs and having neutral conductivity, a first electron feeding layer 3 made of InP and having neutral conductivity, an Si-delta-doped layer 4 formed by a delta-doping method, a second electron feeding layer 5 made of InP...
The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3x10(12)cm(-...
UsedifferentSidelta-dopedGaNbarrierlayerofInGaN-GaNquantumwellLED J.K.Lee Outline IntroductionExperimentResultsandDiscussionConclusionReferences SideltadopinginaGaNbarrierlayerofInGaNGaNmultiquantum Min-KiKwon,Il-KyuPark,Sung-HoBaek,Ja-YeonKim,andSeong-JuPark Introduction TheeffectofSideltadopingoftheGaNbarrier...
Heavy and light hole states in boron delta-doped diamondp-Type-dopingδ-Quantum wellsElectronic statesHole band structureHeavy and light hole states in B δ-doped diamond quantum wells are calculated within the effective mass approximation using a local density Thomas–Fermi approximation for the ...
The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties of a delta-doped phosphorus layer in silicon. This self-consistent model improves on the computational efficiency of "more rigorous" empirical tight binding and ab initio...
Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy Molecular beam epitaxy allows to grow narrow doping profiles which are described by the Dirac-delta function. Ionized impurities of delta(δ)-doped GaAs la... EF Schubert,K Ploog - 《Japanese Journa...
A series of Be delta-doped GaAs/AlAs multiple-quantum wells with the doping at the well center were grown by molecular beam epitaxy. The photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. The two-hole transitions of the acceptor-bound exciton from the...
In diamond, such a delta-doped structure would require [13] a metallic boron-doped p++ layer (concentration nB ≥ 5 × 1020 at.cm− 3) less than 3 nm-thick intercalated between two non-intentionally doped (NID) layers suited to high mobility transport [14] (nB < 2 × 1017 at.cm...