p‐type delta‐doped quantum wellcarbon auto dopingmetal‐organic chemical‐vapor depositionThe vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-...
We analyse the effect of asymmetry in the structure parameters on low-temperature multisubband electron mobility in a barrier delta-doped GaAs/AlGaAs double quantum well structure. We obtain the subband energy levels and wave functions through self-consistent solution of Schrodinger and Poisson''s ...
The effects of in-growth applied electric fields and in-plane (x-oriented) magnetic fields on the nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) of n-type asymmetric double \\(\\delta\\)-doped GaAs quantum well are theoretically ...
In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 up to 3000) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have ...
Measurements are reported on the electrical and optical properties of a series of GaAs/Al0.33Ga0.67As quantum well structures in which a Si delta-doped plane has been placed at the centre of the well. By using a range of well widths for a given planar doping level, it has been possible ...
www.nature.com/scientificreports OPEN Large Optical Gain AlInN-Delta- GaN Quantum Well for Deep Ultraviolet Emitters received: 09 December 2015 accepted: 26 February 2016 Published: 10 March 2016 Chee-Keong Tan, Wei Sun, Damir Borovac & Nelson Tansu The optical gain and spontaneous ...
专利名称：Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures 发明人：Mantu K. Hudait,Aaron A. Budrevich,Dmitri Loubychev,Jack T. Kavalieros,Suman Datta,Joel M. Fastenau,Amy W. K. Liu 申请号：US11647989 申请日：20061229 公开号：US...
Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs A method of formation of two-dimensional structures containing a δ〈Mn〉-doped layer in GaAs and an InxGa1−x As quantum well (QW) separated by a Ga... BA Aronzon,AB Granovsky,AB Davydov,... - 《...
UsedifferentSidelta-dopedGaNbarrierlayerofInGaN-GaNquantumwellLED J.K.Lee Outline IntroductionExperimentResultsandDiscussionConclusionReferences SideltadopinginaGaNbarrierlayerofInGaNGaNmultiquantum Min-KiKwon,Il-KyuPark,Sung-HoBaek,Ja-YeonKim,andSeong-JuPark Introduction TheeffectofSideltadopingoftheGaNbarrier...
The δ-Doped Field-Effect Transistor A new Schottky-gate FET grown by molecular-beam epitaxy is presented. A V-shaped potential well with a 2D electron-gas is generated in the epilayer by impl... Shubert,E.F.,Ploog,... - 《Japanese Journal of Applied Physics. Pt:2, Letters》...