An InGap/GaAs heterojunction bipolar transistro (HBT) with an 50A undoped spacer and delta-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively, This results shows athat ...
Delta doping is a process by which a large surface potential is created to direct photoelectrons generated at the surface toward the photo diodes of an imaging array. The penetration depth of (UV) photons into silicon is tens of nanometers. Photoelectrons generated by (UV) photons recombine wi...
In addition to provide additional holes to the QW, the C delta-doping layer modifies the self-consistent potential profile of the structure, which changes the wave-function overlap10. Besides, CMN samples were grown in a slightly different temperature. This should affect the Mn distribution and ...
Delta doping Technology for Back illuminated CMOS and CCD ImagersNikzad, Shouleh
1) delta-doping Delta掺杂 1. Studies on electrical properties of delta-doping p-GaN films; Delta掺杂制备p-GaN薄膜及其电性能研究 更多例句>> 2) doped [英][dəup] [美][dop] 掺杂 1. Preparation of TiO_2 doped Fe~(3+),La~(3+) and its photocatalytic performance; 镧和铁掺杂纳...
United States Patent US9166035 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
For realizing the Si delta-doping, an abrupt GaAs growth interruption technique which we have newly found was applied. The free carrier concentration was measured by the C-V method. The delta-doped layer has a maximum carrier concentration of 2.2 x 1018 cm-3 and a full width at half-...
In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well ...
Delta-doping of semiconductors 来自 Semantic Scholar 喜欢 0 阅读量: 90 作者: JJ Harris 摘要: The structural, electrical and optical properties of epitaxial semiconductor layers, delta-doped with impurity atoms, are reviewed. The majority of the discussion relates to GaAs, the most-studied material...
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