Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory ...
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Electronic devices such as homostructure and heterostructure field‐effect transistors which employ the δ‐doping technique have a number of advantages including (i) high carrier density, (ii) proximity between electron channel and gate electrode, (iii) large breakdown voltage of the gate, and (iv...
Recent progress in δ-doping of III-V semiconductors grown by metal organic vapour phase epitaxy 1997, Solid-State Electronics Show abstract Theoretical studies on the reaction mechanism of AsCl<inf>3</inf> with H<inf>2</inf> in the vapor phase epitaxy of GaAs 2007, Jiegou HuaxueView...
In addition to provide additional holes to the QW, the C delta-doping layer modifies the self-consistent potential profile of the structure, which changes the wave-function overlap10. Besides, CMN samples were grown in a slightly different temperature. This should affect the Mn distribution and ...
14. The device of claim 9 wherein said layer devoid of shallow dopants is applied at the metallurgical boundary separating the n- and p-doping. 15. In a method of improving the open circuit voltage of a solar cell or photo diode device, wherein the device has an n-type semiconductor an...
The device has a potential application to high-speed multistate logic and memory devices, with the ability to achieve a degree of vertical integration.关键词: III-V semiconductors Schottky gate field effect transistors gallium arsenide molecular beam epitaxial growth semiconductor doping DC ...
The observation of such mechanisms can be explained by the fact that during the MgO deposition, defect states are introduced in the semiconductor band gap. 展开 关键词: III-V semiconductors Doping Contact resistance Gold Semiconductor junctions ...
1, industry standard CMOS processing is then carried out to fabricate the remainder of the Ge QW PMOS device on the above substrate, processing block 150. Such processing includes. FIG. 5 illustrates one embodiment of a quantum well device having a diffusion layer surrounded delta doping area. ...
Enhanced supercurrent density in polycrystalline YBa2Cu3O(7-delta) at 77 K from calcium doping of grain boundarieselectric properties, superconductors, semiconductorstechnology of materials, lasers, semiconductors, superconductorscopper, Cubarium, Ba