区域B:MOSFETQGD这是一个VGS保持在VGP,并持平的区域。ID保持在电感电流,VDS不再继续保持不变,MOSFET的VDS开始下降。这一现象可以从ID-VDS曲线(Figure4)看出:在固定的ID下,随着VDS变化,VGS保持相对平稳。这就是栅电荷曲线中所示的平坦的起点。字这一区域内,栅电流用于给相反的路跨电容(Crss)充电。VDS从VDD+VBD...
现实是：在氮化镓Normally-off D-Mode技术中，氮化镓芯片承受大部分的关断高压（>90%）。硅MOSFET仅需承受几十伏的电压。单位面积的导通电阻随着额定电压按二次方下降，所以硅MOSFET实现了极低的导通电阻（RDS(ON)），不足总电阻的10%，并具有非常小的反向恢复电荷（Qrr）。值得注意的是，这个Qrr比高压超结硅MOSFE...
之所以注意到它们的干净开关,是因为没有 Si MOSFET 常见的体二极管(图 2)。这是与 PN 结相关的大部分开关噪声的原因。 图2:GaN HEMT 晶体管的结构 图2a:与 Si MOSFET 相比,有利于 D 类放大器的优越开关特性 已经实现了无需散热器即可将 160 W 功率传输到 8 Ω的 D 类放大器设计。其中一个原型使用 IGT...
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www.vishay.com SiHF10N40D Vishay Siliconix D Series Power MOSFET TO-220 FULLPAK D G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 V 30 4 7 Single 0.6 FEATURES • ...
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0.032 0.8 0.018 0.45 0.284 7.6 0.073 1.78 0.091 1.65 0.026 0.66 0.122 3.1 FIGURE 2. Dual MOSFET TSSOP-8 Pad Pattern with Copper Spreading Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, "thermal" connections ...
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