MDWC0342ERH 1Mb / 6P Common-Drain Dual N-Channel Trench MOSFET 12V Jan. 2021. Rev 1.2 More results 类似说明 - MDWC0340EBRH 制造商 部件名 数据表 功能描述 Alpha & Omega Semicondu... AOC3860 350Kb / 5P 12V Common-Drain Dual N-Channel MOSFET AOCA24108E 448Kb / 5P 12V Common-Drain...
AP4526GH-VB是一款双N+P沟道金属氧化物半导体场效应晶体管(Dual N+P-Channel MOSFET),采用TO252-4L封装。它具有共源极配置,适用于需要同时控制正负电压的电路设计。该器件采用沟槽技术,具有优异的导通特性和低导通电阻,适合于高效能量转换和电源管理应用。 ### 详细参数说明 - **型号**:AP4526GH-VB - **封...
269Kb/11PDual N-Channel 2.5V Specified PowerTrench MOSFET More results 制造商部件名数据表功能描述 Fairchild SemiconductorFDW2516NZ 135Kb/5PCommon Drain N-Channel 2.5V specified PowerTrench MOSFET FDW2509NZ 105Kb/5PCommon Drain N-Channel 2.5V Specified PowerTrench MOSFET ...
229Kb/5PDual N-Channel 2.5V Specified PowerTrench MOSFET More results 制造商部件名数据表功能描述 Fairchild SemiconductorFDW2516NZ 135Kb/5PCommon Drain N-Channel 2.5V specified PowerTrench MOSFET FDW2515NZ 119Kb/6PCommon Drain N-Channel 2.5V specified PowerTrench MOSFET ...
ACE636BCommon Drain Dual N-Channel Enhancement Mode Field EffectVER 1.21DescriptionAdvanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. HighPower and Current handing capability. Fully Characterized Avalanche Voltage a
237Kb/6PMonolithic Common Drain N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 10A, 23m廓 More results 类似说明 - FDM3300NZ 制造商部件名数据表功能描述 Fairchild SemiconductorFDM2452NZ 137Kb/6PMonolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET ...