AP4526GH-VB是一款双N+P沟道金属氧化物半导体场效应晶体管(Dual N+P-Channel MOSFET),采用TO252-4L封装。它具有共源极配置,适用于需要同时控制正负电压的电路设计。该器件采用沟槽技术,具有优异的导通特性和低导通电阻,适合于高效能量转换和电源管理应用。 ### 详细参数说明 - **型号**:AP4526GH-VB - **封...
While not shown, it is contemplated that the substrate200may include other structures or features at least partially formed therein. For example, in some implementations, a feature such as a via, a trench, a dual damascene feature, high aspect ratio feature, or the like, may be formed within...