随着集成电路工艺特征尺寸进入28nm以下节点,传统的平面MOSFET结构已不再适用,新型的三维晶体管(FinFET)结构逐渐成为摩尔定律得以延续的重要保证。本书从三维结构的原理、物理效应入手,详细讨论了FinFET紧凑模型(BSIM-CMG)产生的背景、原理、参数以及实现方法;同时讨论了在模拟和射频集成电路设计中所采用的仿真模型。本书避...
simulation * Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard* The first book on the industry-standard FinFET model - BSIM-CMGHu, Chenming; Chauhan, Yogesh Singh; Lu, ...
提出了一种适用于FinFET变容管的建模方法.在BSIM-CMG的基础上,模型采用衬底模型和外围寄生模型来表征变容管的射频寄生效应.提出了具体的参数提取方法,将测试的S参数导入到安捷伦IC-CAP建模软件提取参数,测试结构引入高频寄生采用(open+short)去嵌方法进行去嵌.通过调节模型参数拟合测试曲线得到FinFET变容管模型.该模型...
This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry... YS Chauhan,D Lu,S Venugopalan,... - FinFET ...