The essential factor to determine the breakdown voltage of the diode is its doping concentration. Exceeding this voltage level causes the exponential increase in the leakage current of the diode. When a diode breakdown’s, overheating can be observed. So, when operating with reverse voltages heat ...
GaN pn-junction diodes have been grown on GaN and sapphire substrates by metalorganic vapor phase epitaxy and their electrical characteristics have been studied. For the diode on the GaN substrate, the reverse leakage current is lower and the breakdown voltage V B is higher than those on the ...
理想二极管具有单向导电性,理想二极管可以当成一个电阻,当在理想二极管上加上正向电 压时,理想二极管的阻值为零,理想二极管相当于一根理想导线。反向击穿电压,二极管反向击穿时的电压值。二极管反向击穿时的电压值。击穿时反向电流剧增,二极管的单向导电性被破坏,甚至过热而烧坏。 相关...
Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga Japanese Journal of Applied PhysicsUeoka, Y.; Deki, M.; Honda, Y.; Amano, H. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering. Jpn. J. Appl. Phys. 2018,...
A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is achieved by creating a zener diode with a lightly doped region between the P+ and N+ zones. Zener dio...
1) electricbreakdown of P-N junction PN结电击穿 2) PN junction leakage current PN结漏电 3) capacitance of PN junction PN结电容 4) resistance of PN junction PN结电阻 5) PN junction electric field PN结边界电场 1. A novel analytic model on the relationship about the surface voltage and thePN ...
The distribution of the electrical potential around the edge of the field plate in a silicon planar diode has been solved by means of a computer. The break... F Conti,M Conti - 《Solid State Electronics》 被引量: 249发表: 1972年 High-breakdown-voltage pn-junction diodes on GaN substrates...
In this letter, we fabricate a high breakdown voltage (BV) lateral double-channel AlGaN/GaN Schottky barrier diode (SBD) with one grading-AlGaN channel barrier and p-GaN termination. The novel SBD shows a high BV of 2.2 kV and Baliga’s figure of merit
The high-breakdown-voltage Schottky diode comprises a substrate (5), a Ga2O3 epitaxial layer (3), a low-doped n-type Ga2O3 film (4) and a passivation layer (8) from bottom to top. A ring metal cathode (1) and a circular metal anode (2) are arranged in the passivation layer (8...
The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode; 4H-SiC pn结型二极管击穿特性中隧穿效应影响的模拟研究 更多例句>> 5) Vcbo breakdown characteristic Vcbo击穿特性 6) prebreakdown characteristic 预击穿特性 补充...