Reverse-Biased-PN-Junction-Diode The essential factor to determine the breakdown voltage of the diode is its doping concentration. Exceeding this voltage level causes the exponential increase in the leakage current of the diode. When a diode breakdown’s, overheating can be observed. So, when oper...
芳英 平山東 清水哲朗 石田Yoshihide HirayamaAzuma ShimizuTetsuro Ishida
理想二极管具有单向导电性,理想二极管可以当成一个电阻,当在理想二极管上加上正向电 压时,理想二极管的阻值为零,理想二极管相当于一根理想导线。反向击穿电压,二极管反向击穿时的电压值。二极管反向击穿时的电压值。击穿时反向电流剧增,二极管的单向导电性被破坏,甚至过热而烧坏。 相关...
Body to drain junction breakdown, due to avalanching in DMOST devices, can be controlled. The invention lowers the electric field gradients in the vicinity of the PN junction. The structure employed to enhance breakdown behavior is specifically applied to a vertical DMOST. The N type doping ...
The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode; 4H-SiC pn结型二极管击穿特性中隧穿效应影响的模拟研究 更多例句>> 5) Vcbo breakdown characteristic Vcbo击穿特性 6) prebreakdown characteristic 预击穿特性 补充...
2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junctionFengbo Liao; Yian Yin*micro-and-nanostructures, 2023, 178(4).基本信息 相似论文 相关评论 关注科研之友 关于我们| 隐私政策| 服务条款| 联系我们 ©2024 深圳市科研之友网络服务...
A novel analytic model on the relationship about the surface voltage and thePN junction electric fieldwith the ion dose in the drift of gate off MOS is presented. 本文提出了偏置栅MOS管漂移区离子注入剂量对表面电压和PN结边界电场两者关系的一种新的分析模型 ,借助数学推导得到该模型的计算方程 ,通过仿...
The distribution of the electrical potential around the edge of the field plate in a silicon planar diode has been solved by means of a computer. The break... F Conti,M Conti - 《Solid State Electronics》 被引量: 249发表: 1972年 High-breakdown-voltage pn-junction diodes on GaN substrates...
The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping
A computer programme is presented which calculates the field distribution and the critical field in a gate-controlled diode structure. The procedure consists of an over-relaxation potential/field calculation with boundary conditions (junction breakdown voltage at given gate voltage) resulting from ...