Reverse-Biased-PN-Junction-Diode The essential factor to determine the breakdown voltage of the diode is its doping concentration. Exceeding this voltage level causes the exponential increase in the leakage current of the diode. When a diode breakdown’s, overheating can be observed. So, when oper...
理想二极管具有单向导电性,理想二极管可以当成一个电阻,当在理想二极管上加上正向电 压时,理想二极管的阻值为零,理想二极管相当于一根理想导线。反向击穿电压,二极管反向击穿时的电压值。二极管反向击穿时的电压值。击穿时反向电流剧增,二极管的单向导电性被破坏,甚至过热而烧坏。 相关...
芳英 平山東 清水哲朗 石田Yoshihide HirayamaAzuma ShimizuTetsuro Ishida
The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode; 4H-SiC pn结型二极管击穿特性中隧穿效应影响的模拟研究 更多例句>> 5) Vcbo breakdown characteristic Vcbo击穿特性 6) prebreakdown characteristic 预击穿特性 补充...
Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga Japanese Journal of Applied PhysicsUeoka, Y.; Deki, M.; Honda, Y.; Amano, H. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering. Jpn. J. Appl. Phys. 2018,...
Avalanche multiplication is the physical mechanism that causes the primary breakdown of high-voltage reverse-biased p-n junctions. Breakdown occurs when the electric field in the junction depletion region increases to the point at which the impact ionization rate approaches infinity. The most important...
In this letter, we fabricate a high breakdown voltage (BV) lateral double-channel AlGaN/GaN Schottky barrier diode (SBD) with one grading-AlGaN channel barrier and p-GaN termination. The novel SBD shows a high BV of 2.2 kV and Baliga’s figure of merit
A zener diode with a low reverse breakdown avalanche voltage and the use of zener diode in electrostatic discharge protection circuit is described herein. The low breakdown avalanche voltage is achieved by creating a zener diode with a lightly doped region between the P+ and N+ zones. Zener dio...
For 1 kV device there is not a significant difference in breakdown voltage between JTE and SMJTE structures. 展开 关键词: 4H-SiC Avalanche Breakdown Voltage Impact ionization coefficient Junction Termination Extension DOI: 10.4028/www.scientific.net/MSF.778-780.824 ...
We have reported a lateral GaN SBDs on AlGaN/GaN hetero-junction employing floating metal rings (FMRs) which exhibit a very high breakdown voltage, a low leakage current and a low on-state voltage. We have obtained a very high breakdown voltage of 930V without any additional process step. ...